MOSFET GATE DRIVE WITH REDUCED POWER LOSS

专利名称：MOSFET GATE DRIVE WITH REDUCED

POWER LOSS

发明人：WILLIAMS, Richard, K.申请号：EP08767451.1申请日：20080430公开号：EP2156558A1公开日：20100224

摘要：A gate driver for a power MOSFET in, for example, a DC-DC converter switchesthe MOSFET between a fully-on condition and a low-current condition instead ofswitching the MOSFET between fully-on and fully-off conditions. The amount of chargethat must be transferred to charge and discharge the gate of the MOSFET is therebyreduced, and the efficiency of the MOSFET is improved. A feedback circuit may be used toassure that the magnitude of current in the power MOSFET in its low-current condition iscorrect. Alternatively, a trimming process may be used to correct the magnitude of thevoltage supplied by the gate driver to the gate of the power MOSFET in the low-currentcondition.

申请人：Advanced Analogic Technologies, Inc.

地址：3230 Scott Boulevard Santa Clara, CA 950 US

国籍：US

代理机构：Borchert, Uwe Rudolf

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