专利名称：PLANAR CAVITY MEMS AND RELATED
STRUCTURES, METHODS OF MANUFACTUREAND DESIGN STRUCTURES
发明人：George A. DUNBAR, III,Zhong-Xiang
HE,Jeffrey C. MALING,William J.MURPHY,Anthony K. STAMPER
申请号：US12973422申请日：20101220
公开号：US20110316099A1公开日：20111229
专利附图：
摘要：A method of forming at least one Micro-Electro-Mechanical System (MEMS)includes forming a lower wiring layer on a substrate. The method further includesforming a plurality of discrete wires from the lower wiring layer. The method furtherincludes forming an electrode beam over the plurality of discrete wires. The at least oneof the forming of the electrode beam and the plurality of discrete wires are formed witha layout which minimizes hillocks and triple points in subsequent silicon deposition.
申请人：George A. DUNBAR, III,Zhong-Xiang HE,Jeffrey C. MALING,William J.
MURPHY,Anthony K. STAMPER
地址：Essex Junction VT US,Essex Junction VT US,Grand Isle VT US,North FerrisburghVT US,Williston VT US
国籍：US,US,US,US,US
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