专利名称：Quantum well device with lateral electrodes发明人：Robert L. Willett申请号：US13349056申请日：20120112公开号：US08987703B2公开日：20150324
专利附图：
摘要：An apparatus includes a substrate, a sequence of crystalline semiconductorlayers on a planar surface of the substrate, and first and second sets of electrodes overthe sequence. The sequence has a 2D quantum well therein. The first set of electrodesborder opposite sides of a lateral region of the sequence and are controllable to vary a
width of a non-depleted portion of the quantum well along the top surface. The secondset of electrodes border channels between the lateral region and first and secondadjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such thatstraight lines connecting the lateral areas via the channels either pass between one ofthe electrodes and the substrate or are misaligned to an effective [1 0] lattice directionof the sequence.
申请人：Robert L. Willett
地址：Warren NJ US
国籍：US
代理人：John F. McCabe
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