专利名称：Nitride semiconductor laser device发明人：Itoh, Kunio,Yuri, Masaaki,Hashimoto,
Tadao,Ishida, Masahiro
申请号：EP99106798.4申请日：19990406公开号：EP0949731B1公开日：20020306
摘要：The nitride semiconductor laser device of the present invention includes: anitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on atleast one facet of the nitride semiconductor laser diode. The protective layer is made ofAl1-x-y-zGaxInyBzN (where 0
申请人：MATSUSHITA ELECTRIC IND CO LTD
地址：JP
国籍：JP
代理机构：Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容