专利名称：Nitride semiconductor laser device发明人：Shinichi Kohda申请号：US12344343申请日：20081226公开号：US07876798B2公开日：20110125
专利附图：
摘要：A nitride semiconductor laser device is formed by growing a group III nitridesemiconductor multilayer structure on a substrate containing no Al. The group III nitridesemiconductor multilayer structure forms a structure including an n-type semiconductorlayer, a p-type semiconductor layer, and a light emitting layer held between the n-type
semiconductor layer and the p-type semiconductor layer. The n-type semiconductorlayer includes an n-type cladding layer containing Al and an n-type guide layer having asmaller band gap than the n-type cladding layer. The p-type semiconductor layerincludes a p-type cladding layer containing Al and a p-type guide layer having a smallerband gap than the p-type cladding layer. A removal region is formed by partiallyremoving the layers containing Al in the group III nitride semiconductor multilayerstructure from the substrate.
申请人：Shinichi Kohda
地址：Kyoto JP
国籍：JP
代理机构：Rabin & Berdo, PC
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