Semiconductor device having trench-type gate and i

专利名称：Semiconductor device having trench-type

gate and its manufacturing method capableof simplifying manufacturing steps

发明人：Wataru Sumida申请号：US12453551申请日：20090514

公开号：US20090227102A1公开日：20090910

专利附图：

摘要：In a semiconductor device, a gate silicon dioxide layer is formed within a trenchof a semiconductor wafer. A first gate electrode is formed on a sidewall of the trench of

the semiconductor wafer via the gate silicon dioxide layer. An insulating layer is formedon a bottom of the trench of the semiconductor wafer via the gate silicon dioxide layerand surrounded by the first gate electrode. The insulating layer excludes silicon dioxideand has different etching characteristics from those of silicon dioxide. A second gateelectrode is buried in the trench of the semiconductor wafer, and is in contact with thefirst gate electrode and the insulating layer.

申请人：Wataru Sumida

地址：Shiga JP

国籍：JP

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