Sourcedrain extension implant process for use wit

专利名称：Source/drain extension implant process for

use with short time anneals

发明人：Ambitabh Jain,Gordon Pollack申请号：US10842308申请日：20040510

公开号：US20050250288A1公开日：20051110

专利附图：

摘要：The present invention provides, in one embodiment, a process for fabricating ametal oxide semiconductor (MOS) device (). The process includes forming a gate () on asubstrate () and forming a source/drain extension () in the substrate (). Forming the

source/drain extension () comprises an abnormal-angled dopant implantation () and adopant implantation (). The abnormal-angled dopant implantation () uses a firstacceleration energy and tilt angle of greater than about zero degrees. The dopantimplantation () uses a second acceleration energy that is higher than the first accelerationenergy. The process also includes performing an ultrahigh high temperature anneal ofthe substrate (), wherein a portion () of the source/drain extension () is under the gate ().

申请人：Ambitabh Jain,Gordon Pollack

地址：Allen TX US,Richardson TX US

国籍：US,US

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