碲镉汞红外探测器的前沿技术综述

2

1

1672-8785(2014)02-0001-08

1

1,2

1,2

(1.

200083

2.

100049)

(HgCdTe)

SWaP3(Size,Weight,andPower,PerformanceandPrice)

HgCdTe

(HighOperatingTemperature,HOT)

SWaP3

TN215

ADOI:10.3969/j.issn.1672-8785.2014.02.001

OverviewofLatestTechnologiesofHgCdTeInfrared

PhotoelectricDetectors

YEZhen-hua1,CHENYi-yu

1,2

,ZHANGPeng

1,2

(1.ShanghaiInstituteofTechnicalPhysics,ChineseAcademyofSciences,Shanghai200083,China;

2.UniversityofChineseAcademyofSciences,Beijing100049,China)

Abstract:Infraredphotoelectricdetectorshaveshowntheirversatilityinmilitary,civilianandscientificresearchapplications.Becauseofmanyadvantages,thedetectormaterialHgCdTehasplayedavitalroleinthedevelopmentofinfraredphotoelectricdetectors.Uptonow,itisstillthebestchoiceformanyapplications.First,theSWaP3conceptproposedforthenewgenerationofinfrareddetectorsisanalyzed.Then,theHgCdTematerialsqualifiedforthethirdgenerationofinfraredfocalplanearrays(FPA)arepresentedinbrief.Finally,theresearchprogressoflargeformatarraydevices,verylongwavelengthdevices,highoperationtemperature(HOT)devices,hyper-spectraldevices,dual-banddevicesandavalanchephotoelectricdiodes(APD)issummarized.

Keywords:HgCdTe;SWaP3concept;HOT;hyper-spectral;dual-band;APD

0

(HgCdTe)

(InSb)

(PtSi)

/

(AlGaAs/GaAs)

2014–01–20

(1977-)

E-mail:zhye@mail.sitp.ac.cn

http://journal.sitp.ac.cn/hwInfrared(monthly)/Vol.35,No.2,Feb2014

2

2014

2

1

SWaP3

[1]

(1)

[1−2]

(2)

HgCdTe

(3)

1959

HgCdTe

20

70

Cd

HgCdTe

0

∼1.6eV

(

)

HgCdTe(2)

(

)

(1)

(3)

/

(4)

(5)

[1]

p–n

SWaP3

[4]

1

SWaP3

SWaP3

·

1999

HgCdTe

SWaP3

HgCdTe

(multi-color)

1

SWaP3

Infrared(monthly)/Vol.35,No.2,Feb2014http://journal.sitp.ac.cn/hw

35

2

SWaP3

2HgCdTe

HgCdTe

(LiquidPhaseEpitaxy,LPE)

HgCdTe

HgCdTe

(Molecular

BeamEpitaxy,MBE)

(Metal-OrganicVapor-PhaseEpitaxy,MOVPE)

HgCdTe/

DRS

CEA–Leti

Sofradir

AIM

SELEX

2.1

LPE

HgCdTe

Zn

4%

(CdZnTe)

CdZnTe

HgCdTe

CdZnTe

CEA–Leti

90mm

CdZnTe

115mm

(

2)

[3]

Cd

CdZnTe

(EtchPitDensity,EPD)

http://journal.sitp.ac.cn/hw3

104/cm2∼105/cm2

X

CdZnTe

25arcsec

∼45arcsec

2CEA–Leti115mm

CdZnTe

MBE

MOVPE

HgCdTe

(Si)

(Ge)

(GaAs)

HgCdTe

(

Ge

HgCdTe

14%)

MBE

HgCdTe

LPE

2.2HgCdTe

LPE

HgCdTe

Cd

Hg

Te

(1.7∼3µm)(3∼5µm)

(8∼10

µm)

(>12µm)

HgCdTe

±1.5

µm±0.25

µm

[5]

X

25arcsec∼

40arcsec42EPD

10/cm∼105/cm2

(

)

Infrared(monthly)/Vol.35,No.2,Feb2014

4

MBE

LPE

HgCdTe

/

MBE

MBE

HgCdTe

MBE

MBE

(In)n

(As)

p

MBE

Si

Ge

GaAs

CdZnTe

MBE

HgCdTe

LPE

MOVPE

MBE

HgCdTeSELEX

MOVPE

GaAs

HgCdTe2M

3HgCdTe

HgCdTe

HgCdTe

HgCdTe

3.1

AIM

LPE

(CdZnTe

)

MBE

(GaAs

)

15µm

1280×1024

(80K

5.3µm)

(80K

10µm)

[5]

SELEX

MOVPE

GaAs

12µm

Infrared(monthly)/Vol.35,No.2,Feb20142014

2

1920×1080

HgCdTe

(

FALCON)8

16M

3)

[7]

(

16M

50µm

90%

3

SELEX

16M

Cd

0.18µm

(

9µm

)

15µm

12µm

10µm2k×2k

[5]

15µm

6µm

6µm

http://journal.sitp.ac.cn/hw

35

2

AIM

99%

80K

99.96%

SELEX

99.6%

3.2

HgCdTe

HgCdTe

Cd

HgCdTe

16µm

Cd

1%

4.4%(0.7µm)

Sofradir

n–on–p

CdZnTe

16µm(

55K)

HgCdTe

30µm

320×256

55K

99.6%

[8]

p–on–n

[9]

2

3.3HOT

HOT

exp(–Eg/kT)

exp(–Eg/2kT)

http://journal.sitp.ac.cn/hw5

HOT

p–on–n

3.3.1

4

nBn

SRH

nBnB

HgCdTe

nested

[10−11]

[10]

4

nBn

3.3.2

200K

100mK

(NoiseEquivalentTemperatureDifference,NETD)

[12]

Infrared(monthly)/Vol.35,No.2,Feb2014

63.4

Sofradir

NEP-TURE

SATURN(

500×256

1000×256

)

–

1024×1024

1111

HgCdTe

[8]

3.5

/

HgCdTe

MBE

HgCdTe

HgCdTe

HgCdTe

4

NETD

MW–MW(λc=4.6µm&5.5µm)

50%

NETD20mK

98K

99.8%

MW–LW(λc=5.6µm&10µm)

99.8%(MW)

98.5%(LW)

0×480

24µm

20

µm

[3]

Si

3

n–p–n

MW–LW

(λc=5.1µm&9.6µm@81K)

Infrared(monthly)/Vol.35,No.2,Feb20142014

2

0×480

99.98%(MW)

98.7%(LW)

2009

[13]

5

Sofradir

HgCdTe

HgCdTe

3.6HgCdTe

2

4

CMOS

HgCdTe

/

1.0∼2.5µm

×10

2×10−11A/cm2

[15]

360e/s/

SELEX

3D

[13]

6

3D

(

)

Sofradir

30

µm

320×256

[5]

2kHz

(20MHz)

[15]

http://journal.sitp.ac.cn/hw

35

2

7

5

Sofradir

[14]

6

SELEX

3D

2D/3D

4

HgCdTe

HgCdTe

II

HOT

HgCdTe

HgCdTe

MBE

MOVPE

http://journal.sitp.ac.cn/hwInfrared(monthly)/Vol.35,No.2,Feb2014

8

2014

2

HgCdTe

HgCdTe

[8]PatriciaP,NicolasJ,BrunoF,etal.AReviewof

theLatestDevelopmentsofMCTInfraredTechnol-ogyfromVisibletoVLWIRforSpaceApplicationsatSofradir[C].SPIE,2013,8074:80740M.

[9]LeroyC,PhilippeC,DestefanisG.LWIRandVL-WIRMCTTechnologiesandDetectorsDevelopmentatSOFRADIRforSpaceApplications[C].SPIE,2012,8353:83532O.

[10]ItsunoAM.Bandgap-EngineeredHgCdTeInfrared

DetectorStructuresforReducedCoolingRequire-ments[D].Diss:UniversityofMichigan,2012.

[11]Martyniuk,P,RogalskiA.TheoreticalModellingof

MWIRThermoelectricallyCoolednBnHgCdTeDe-tector[J].BulletinofthePolishAcademyofSciences:TechnicalSciences,2013,61(1):211–220.

[12]KopytkoM,KeblowskiAK,GawronW,etal.High-operatingTemperatureMWIRnBnHgCdTeDetec-torGrownbyMOCVD[J].Opto-ElectronicsReview,2013,21(4):402–405.

[13]VilelaMF,OlssonKR,NortonEM,etal.High-PerformanceM/LWIRDual-BandHgCdTe/SiFocal-PlaneArrays[J].JournalofElectronicMaterials,2013,42(11):3231–3238.

[14]YannR,FabienC,CedricV,etal.InfraredDual

BandDetectorsforNextGeneration[C].SPIE,2011,8012:801238.

[15]AshcroftA,BakerI.DevelopmentsinHgCdTe

AvalanchePhotodiodeTechnologyandApplications[C].SPIE,2010,7660:76603C.

[1][2]

[J].

,2011,41(4):365–370.

[J].

,2009,32(3):96–99.

[3]RogalskiA,AntoszewskiJ,FaraoneL.ThirdGener-ationInfraredPhotodetectorArrays[J].JournalofAppliedPhysics,2009,105(9):091101.

[4]AlainM,LaurentR,YannR,etal.ImprovedIRDe-tectorstoSwapHeavySystemsforSWaP[C].SPIE,2013,8353:835334.

[5]GravrandO,DestefanisG,BisottoS,etal.Issuesin

HgCdTeResearchandExpectedProgressinInfraredDetectorFabrication[J].JournalofElectronicMa-terials,2013,42(11):3349–3358.

[6]ZieglerJ,BitterlichH,BreiterR,etal.Large-format

MWIRandLWIRDetectorsatAIM[C].SPIE,2013,8074:80742L.

[7]ThorneP,GordonJ,HipwoodLG,etal.

[C].SPIE,2013,8074:80742M.

16

Megapixel12µmArrayDevelopmentsatSelexES

News300T70

(OPIR)

2016

/

150

www.airforce-technology.com

CHIRP

1

HienVu

2012

7

CHIRP

2016

CHIRP

(CHIRP)

HienVu

CHIRP

3600

2000×2000

CHIRP

27

1/4

CHIRP

20139

12

2011

SES–2

Infrared(monthly)/Vol.35,No.2,Feb2014http://journal.sitp.ac.cn/hw