MPSA65资料

MPSA65 / MMBTA65 / PZTA65Discrete POWER & SignalTechnologiesMPSA65MMBTA65CPZTA65CECBECTO-92ESOT-23Mark: 2WBSOT-223BPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA for characteristics.Absolute Maximum Ratings* TA = 25°C unless otherwise notedSymbolVCESVCBOVEBOICTJ, TstgCollector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector Current - ContinuousOperating and Storage Junction Temperature RangeParameterValue3030101.2-55 to +150UnitsVVVA°C*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbolPDRθJCRθJACharacteristicTotal Device DissipationDerate above 25°CThermal Resistance, Junction to CaseThermal Resistance, Junction to AmbientMPSA656255.083.3200Max*MMBTA653502.8357**PZTA651,0008.0125UnitsmWmW/°C°C/W°C/W*Device mounted on FR-4 PCB 1.6\" X 1.6\" X 0.06.\"**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.© 1997 Fairchild Semiconductor CorporationA65, Rev A

元器件交易网www.cecb2b.com

MPSA65 / MMBTA65 / PZTA65PNP Darlington Transistor(continued)Electrical Characteristics TA = 25°C unless otherwise notedSymbolParameterTest ConditionsMinMaxUnitsOFF CHARACTERISTICSV(BR)CESICBOIEBOCollector-Emitter BreakdownVoltageCollector-Cutoff CurrentEmitter-Cutoff CurrentIC = 100 µA, IB = 0VCB = 30 V, IE = 0VEB = 8.0 V, IC = 030100100VnAnAON CHARACTERISTICS*hFEVCE(sat)VBE(on)DC Current GainCollector-Emitter Saturation VoltageBase-Emitter On VoltageIC = 10 mA, VCE = 5.0 VIC = 100 mA, VCE = 5.0 VIC = 100 mA, IB = 0.1 mAIC = 100 mA, VCE = 5.0 V50,00020,0001.52.0VVSMALL SIGNAL CHARACTERISTICSfTCurrent Gain - Bandwidth ProductIC = 10 mA, VCE = 5.0 V,f = 100 MHz100MHz*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%