专利名称：Method of manufacturing a substantially flat
surface of a semiconductor device through apolishing operation
发明人：HAYASHI YOSHIHIRO申请号：US10439298申请日：19980625公开号：US6180510B1公开日：20010130
摘要：For giving a device surface to a semiconductor device comprising a
semiconductor substrate portion which has a substrate surface and a protruding portionprotruding from the substrate surface, a method includes the steps of coating thesubstrate surface and the protruding portion with a first anti-polishing film, depositing aninsulator film on the first anti-polishing film, and coating the insulator film with a secondanti-polishing film. The insulator film has a first polishing rate for a polishing operation.The second anti-polishing film has a second polishing rate which can be slower than thefirst polishing rate for the polishing operation. Thereafter, the polishing operation isapplied to the second anti-polishing film and to the insulator to make the device surfacebecome substantially planarized. It is preferable that the first anti-polishing film has thesecond polishing rate for the polishing operation.
申请人：NEC CORPORATION
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