专利名称：Method for fabricating a mosfet and a
mosfet
发明人：Nam-Sung Kim申请号：US10224490申请日：20020821
公开号：US20020185678A1公开日：20021212
专利附图：
摘要：A MOS transistor and a method for fabricating the MOS transistor whichincludes the forming a gate electrode containing an HLD film; etching the HLD film;etching a pad oxide film formed at a lower portion of the HLD film at a predetermined
thickness; removing the nitride side wall spacer of an opening in the gate electrode;forming a LDD region by implanting impurity ions into the semiconductor substrate atboth sides of the gate electrode; forming a side wall spacer at both sides of the gateelectrode; and forming a source/drain by implanting impurity ions into the semiconductorsubstrate.
申请人：HYUNDAI ELECTRONICS CO., LTD.
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容