TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC Preliminary TLP350 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP350 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP350 is suitable for gate driving circuit of IGBT or power MOS FET.. • Peak output current: IO = ±2.0 A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current:ICC = 2 mA (max) • Power supply voltage: VCC = 15 to 30 V • Threshold input current : IFLH = 5 mA (max) • Switching time (tpLH/tpHL) : 500 ns (max) • Common mode transient immunity: 15 kV/µs • Isolation voltage: 3750 Vrms Unit: mm JEDEC JEITA ― ― Truth Table Input LED Tr1 Tr2 Output H ON ON OFF H L OFF OFF ON L TOSHIBA 11-10C4 Weight: 0.54 g (typ.) Pin Configuration (top view) 1 2 3 4 8 7 6 5 1: NC 2: Anode 3: Cathode 4: NC 5: GND 6: VO (output)7: NC 8: VCC Schematic (Tr1) IF2+VF3−IO 6 (Tr2) VO 5 GND A 0.1 µF bypass capacitor must be connected between pin 8 and 5. (See Note 6) ICC 8 VCC 12003-10-27 TLP350 Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating Unit Forward current Forward current derating (Ta ≥ 85°C) LED Peak transient forward current Reverse voltage Junction temperature “H” peak output current Detector “L” peak output current (Note 2)(Note 2)(Note 1)IF 20 mA ∆IF/∆Ta −0.54 mA/°C IFP 1 A VR 5 V Tj 125 °C IOPH −2.0 A IOPL 2.0 A VO 35 V VCC 35 V Tj 125 °C Output voltage (Note 3)Supply voltage (Note 3)Junction temperature Operating frequency Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 4)f Tstg Topr −55 to 125 −40 to 100 kHz °C °C (Note 5)(Note 6)Tsol 260 °C BVS 3750 Vrms Note 1: Pulse width PW ≤ 1 µs, 300 pps Note 2: Exponential waveform pulse width PW ≤ µs, f ≤ kHz Note 3: Ta ≤ 100 °C Note 4: Exponential waveform IOPH ≤ A (≤ µs), IOPL ≤ + A (≤ µs),Ta = °C Note 5: It is 2 mm or more from a lead root. Note 6: Device considerd a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Note 7: A ceramic capacitor(0.1 µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Recommended Operating Conditions Characteristics Symbol MinTyp.Input current, ON Input voltage, OFF Supply voltage Peak output current Operating temperature (Note 8) MaxUnitIF (ON) 7.5 10 mA VF (OFF) 0 0.8 V VCC 15 30 V IOPH/IOPL Topr −40 ±1.0A °C 100Note 8: Input signal rise time (fall time) < 0.5 µs. 22003-10-27 TLP350 Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified) Test Characteristics Symbol CircuitForward voltage Temperature coefficient of forward voltage Input reverse current Input capacitance “H” Level VF ∆VF/∆Ta IR CT IOPH1 IOPH2 1 Test Condition Min Typ.* MaxUnitV IF = 5 mA, Ta = 25°C IF = 5 mA VR = 5 V, Ta = 25°C V = 0 , f = 1 MHz,Ta = 25°C VCC = 30 V IF = 5 mA VCC = 30 V IF = 0 mA V8-6 = 4.0 V V8-6 = V6-5 = 2.0 V V6-5 = IO = −100 mA, IF = 5 mA IO = 100 mA, VF = 0.8 V IF = 10 mA IF = 0 mA 1.55 1.70 −2.0 mV/°C 10 µA 45 pF−1.0 1.0 −1.5 2.0 A Output current (Note 9) IOPL1 “L” Level IOPL2 “H” Level Output voltage “L” Level Supply current “H” Level “L” Level Threshold input current Threshold input voltage Supply voltage UVLO thresh hold L → H H → L 2 VOH 3 VCC 1= +15 V VEE 1= -15 V VOL 4 ICCH 5 VCC = 30 V VO open ICCL 6 IFLH VFHL VCC VUVLO+ VUVLO- 11 V 1.0 2.0 2.0 5 mA0.8 V mAVCC 1= +15 V VEE 1= -15 V, VO > 0 V VCC 1= +15 V VEE 1= -15 V, VO < 0 V VO > 2.5 V , IF = 5 mA , IO=100 mA 15 30 V 11.0 9.5 13.512.0V V *: All typical values are at Ta = 25°C Note 9: Duration of IO time ≤ 50 µs Note 10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max.UnitCapacitance input to output Isolation resistance CS RS V = 0,f = 1MHz VS = 500 V, Ta = 25°C, R.H. ≤ 60% (Note6)AC,1 minute Isolation voltage BVS AC,1 second,in oil DC,1 minute,in oil (Note6) 0.8 pF 1×1012 1014 ― ― Ω 3750 ― ― 10000 ― Vrms ― 10000 ― Vdc 32003-10-27 TLP350 Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified) Test Characteristics Symbol CircuitL → H Propagation delay time H → L Propagation delay difference between any two parts or channels Output rise time (10-90%) Output fall time (90-10%) Common mode transient immunity at hight level output Common mode transient immunity at low level output tpLH tpHL PDD |tpHL-tpLH| tr tf CMH 8 CML 7 Test Condition Min 50 50 −15000 15000 Typ.* Max250 250 500ns 500ns UnitVCC 1= +15 V IF = 0 → 5 mAVEE 1= -15 V Rg = 20 Ω IF = 5 → 0 mACg = 10 nF VCC 1= +15 V , VEE 1= -15 V, Rg = 20 Ω, Cg = 10 nF VCC 1= +15 V IF = 0 → 5 mAVEE 1= -15 V Rg = 20 Ω IF = 5 → 0 mACg = 10 nF IF = 5 mA VCM = 1000 Vp-pVO (min) =26VTa = 25°C IF = 0 mA VCC = 30 V VO (max) =1V 450 ns V/µs *: All typical values are at Ta = 25°C Test Circuit 1: IOPH 1 IF 4 5 8 V8-6A IOPHTest Circuit 2: IOPL 18 VCC A 45 IOPL VCCV6-5 Test Circuit 3: VOH Test Circuit 5: ICCH IF 4 5 1 8 ICCH A VCCIF 4 5 1 Test Circuit 4: VOL 8 V VOHVCC1 18 VCC1 Test Circuit 6: ICCL 18 ICCL A 45 V VOL VF VEE1 VEE1 45 VCC42003-10-27 TLP350 Test Circuit 7: tpLH, tpHL, tr, tf, PDD 8 0.1 µF VORg = 20 ΩVCC1IFtrtf VOH80%GND80%tpLHtpHL VOL IF 1 4 = 10 nFCg 5 Test Circuit 8: CMH, CML 1 IF 8 0.1 µF V EE1 VO90%VCM10%1000 V B trtf VOVCCA • SW A: IF = 5 mA CMH 4 5 V VOVCM V CML+ − • SW B: IF = 0 mA 800 V CML =tf (µs) 800 V CMH =tr (µs) CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. SW 52003-10-27 TLP350 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EBC• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 62003-10-27
