TPCS8101资料

TPCS8101

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

TPCS8101

Unit: mm

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

l Small footprint due to small and thin package

l Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance: |Yfs| = 12 S (typ.) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

l Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current

DC (Note 1) Pulse (Note 1) VDSS VDGR

−30 V −30 V VGSS ±20 V ID IDP

−6 −24

A

JEDEC JEITA

― ―

Drain power dissipation (t = 10 s)

W PD 1.5 (Note 2a) TOSHIBA 2-3R1B Drain power dissipation (t = 10 s)

W PD 0.6 Weight: 0.035 g (typ.) (Note 2b) Single pulse avalanche energy mJ EAS 46.8 (Note 3) Avalanche current

Repetitive avalanche energy (Note 2a, Note 4) Channel temperature Storage temperature range

IAR

−6 A Circuit Configuration

mJ EAR 0.15 °C Tch 150 Tstg

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page. This transistor is an electrostatic sensitive device. Please handle with caution.

12003-02-20

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TPCS8101 Thermal Characteristics

Characteristics Symbol MaxUnit Thermal resistance, channel to ambient

(t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Rth (ch-a) 83.3Rth (ch-a) 208°C/W °C/W

Marking (Note 5)

Type S8101 ※

Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2:

a) Device mounted on a glass-epoxy board (a) FR-4

25.4 × 25.4 × 0.8(unit: mm)

b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8 (unit: mm)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ○ on lower right of the marking indicates Pin 1.

Weekly code: ※(Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53) Year of manufacture

(One low-order digits of calendar year)

22003-02-20

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TPCS8101 Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. MaxUnit

Gate leakage current Drain cut-OFF current

Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance

Reverse transfer capacitance Output capacitance

Rise time

IGSS IDSS V (BR) DSSV (BR) DSX

Vth RDS (ON) RDS (ON)

VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −3 A VGS = −10 V, ID = −3 A

¾ ¾ −30 −15 −0.8

¾ ±10¾ ¾ ¾ ¾

−10¾ ¾ −2.0

µA µA V V

¾ 32 40 mΩ

¾ 15 25 6

12

¾ S |Yfs| VDS = −10 V, ID = −3 A Ciss Crss Coss tr

VDS = −10 V, VGS = 0 V, f = 1 MHz

¾ 1810 ¾ pF ¾ 350 ¾ pF ¾ 610 ¾ pF ¾ 9 ¾

Turn-ON time

Switching time

Fall time

ton

¾ 15 ¾

ns

tf

¾ 49 ¾

Turn-OFF time

Total gate charge

(gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge

toff Qg Qgs Qgd

¾ 135 ¾

¾ 37 ¾ nC VDD ≈ −24 V, VGS = −10 V, ID = −6 A

¾ 30 ¾ nC ¾ 7 ¾ nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Drain reverse current

Pulse (Note 1) IDRP VDSF

Test Condition

Min Typ. MaxUnit

— — — −24A

IDR = −6 A, VGS = 0 V

— — 1.2 V Forward voltage (diode)

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TPCS8101

42003-02-20

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TPCS8101

DRAIN POWER DISSIPATION PD (W)

PD – Ta

2.0(1) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) 1.6(1) (NOTE 2a) (2) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) 1.2(NOTE 2b) t = 10 s

0.8(2) 0.400 40 80 120 160 200

AMBIENT TEMPERATURE Ta (°C)

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TPCS8101

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TPCS8101

RESTRICTIONS ON PRODUCT USE

000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.

72003-02-20