专利名称：Method of forming a semiconductor layer发明人：Hunter J. Martinez,John J. Hackenberg,Jill
Hildreth,Ross E. Noble
申请号：US12275659申请日：20081121公开号：US07972922B2公开日：20110705
专利附图：
摘要：A method of forming a semiconductor layer, which in one embodiment is part ofa photodetector, includes forming a silicon shape, applying ozonated water, removingthe first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing
germanium. The silicon shape has a top surface that is exposed. The ozonated water isapplied to the top surface and causes formation of a first oxide layer on the top surface.The germanium is grown on the top surface.
申请人：Hunter J. Martinez,John J. Hackenberg,Jill Hildreth,Ross E. Noble
地址：Austin TX US,Austin TX US,Austin TX US,Austin TX US
国籍：US,US,US,US
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