A29L040A Series
512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory
Preliminary
Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory
Revision History
0.0
Initial issue
March 9, 2005
Preliminary
Date Remark Rev. No. History Issue PRELIMINARY (March, 2005, Version 0.0)
AMIC Technology, Corp.
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A29L040A Series
512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors and verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
Typical 100,000 program/erase cycles per sector 20-year data retention at 125°C
- Reliable operation for the life of the system Compatible with JEDEC-standards - Pinout and software compatible with single-power-supply Flash memory standard
- Superior inadvertent write protection Data Polling and toggle bits
- Provides a software method of detecting completion of program or erase operations Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation Package options
- 32-pin DIP, PLCC, TSOP (8mm x 20mm), sTSOP (8mm x 13.4mm), sTSOP (8mm x 14mm).
Preliminary
Features
Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and write
operations for compatibility with high performance 3.3 volt microprocessors Access times: - 70 (max.) Current:
- 4 mA typical active read current
- 20 mA typical program/erase current - 200 nA typical CMOS standby
- 200 nA Automatic Sleep Mode current Flexible sector architecture
- 8 uniform sectors of 64 Kbyte each
- Any combination of sectors can be erased - Supports full chip erase - Sector protection:
A hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector
Embedded Erase Algorithms
General Description
The A29L040A is a 3.0 volt-only Flash memory organized as 524,288 bytes of 8 bits each. The 512 Kbytes of data are further divided into eight sectors of 64 Kbytes each for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A18. The A29L040A is offered in 32-pin PLCC, TSOP (8mm x 20mm) or sTSOP (8mm x 13.4mm) packages. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29L040A can also be programmed in standard EPROM programmers.
The A29L040A has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase, and also offers the ability to program in the Erase Suspend mode. The standard A29L040A offers access times of 70ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
The A29L040A is entirely software command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin. Device erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin.
The host system can detect whether a program or erase operation is complete by reading the I/O7 (Data Polling) and I/O6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data
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A29L040A Series
The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure. True background erase can thus be achieved.
Power consumption is greatly reduced when the device is placed in the standby mode.
contents of other sectors. The A29L040A is fully erased when shipped from the factory.
The hardware sector protection feature disables operations for both program and erase in any combination of the sectors of memory. This can be achieved via programming equipment.
Pin Configurations
A18A16A15A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2VSS
12345678910111213141516
DIP
32313029282726252423222120191817
VCCWEA17
PLCC
VCCA12A16A18A15A1730WE314321A14A13A8A9A11OEA10CEI/O7I/O6I/O5I/O4I/O3
A7A6A5A4A3A2A1A0I/O0
5678910111213141516171819203229282726A14A13A8A9A11OEA10CEI/O7
A29L040AA29L040AL2524232221I/O1I/O2I/O3I/O4I/O5VSSI/O6
32-pin TSOP (8mm X 20mm) 32-pin sTSOP (8mm X 13.4mm) 32-pin sTSOP (8mm X 14mm)
A11A9A8A13A14A17WEVCCA18A16A15A12A7A6A5A41234567891011121314151632313029282726252423222120191817
OEA10CEI/O7I/O6I/O5I/O4I/O3VSSI/O2I/O1I/O0A0A1A2A3A29L040AV (8mm x 20mm)A29L040AX (8mm x 13.4mm)A29L040AY (8mm x 14mm)
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A29L040A Series
Block Diagram
I/O0 - I/O7VCCVSSErase VoltageGeneratorInput/OutputBuffersWEStateControlPGM VoltageGeneratorChip EnableOutput EnableLogicSTBData LatchCommandRegisterCEOEY-DecoderAddress LatchSTBVCC DetectorTimerY-GatingX-decoderCell MatrixA0-A18
Pin Descriptions
Pin No. A0 - A18 Description Address Inputs I/O0 - I/O7 Data Inputs/Outputs CE Chip Enable Write Enable Output Enable WE OE VSS Ground VCC Power Supply
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A29L040A Series
Absolute Maximum Ratings*
Storage Temperature Plastic Packages . . . . . .0°C to + 70°C . . . . . . . . . . . . . . . . . . . . . …... for -U series: -40°C to +85°C Ambient Temperature with Power Applied . . . 0°C to + 70°C . . . . . . . . . . . . . . . . . . . . . . for -U series: -40°C to +85°C Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . ….. -0.5V to +4.0V A9 &OE (Note 2) . . . . . . . . . . . . . . . . . . . … -0.5 to +12.5V All other pins (Note 1) . . . . . . . . . . . .... -0.5V to VCC + 0.5V Output Short Circuit Current (Note 3) . . . . . . . . . … 200mA
*Comments
Stresses above those listed under \"Absolute Maximum Ratings\" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.
Operating Ranges
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . ……. . . 0°C to +70°C Extended Range Devices
Ambient Temperature (TA) . . . . . . . . . . . ….. -40°C to +85°C VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . . . . +2.7V to +3.6V Operating ranges define those limits between which the functionally of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During
voltage transitions, input or I/O pins may undershoot VSS to -2.0V for periods of up to 20ns. Maximum DC voltage on input and I/O pins is VCC +0.2V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0V for periods up to 20ns.
2. Minimum DC input voltage on A9 and OE is -0.5V. During voltage transitions, A9 andOE may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
3. No more than one output is shorted at a time. Duration of
the short circuit should not be greater than one second.
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the
command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The appropriate device bus operations table lists the inputs and control levels required, and the resulting output. The following subsections describe each of these operations in further detail.
Table 1. A29L040A Device Bus Operations
Operation Read Write CMOS Standby TTL Standby Output Disable CE L L VCC ± 0.3 V H L OE L H X X H WE H L X X H A0 – A18 AIN AIN X X X I/O0 - I/O7 DOUT DIN High-Z High-Z High-Z Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In Note: See the \"Sector Protection/Unprotection\" section, for more information.
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A29L040A Series
\"Autoselect Mode\" and \"Autoselect Command Sequence\" sections for more information.
ICC2 in the Characteristics table represents the active current specification for the write mode. The \"AC Characteristics\" section contains timing specification tables and timing diagrams for write operations.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CEand OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH all the time during read operation. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See \"Reading Array Data\" for more information. Refer to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for the timing waveforms, lCC1 in the DC Characteristics table represents the active current specification for reading array data.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the operation by reading the status bits on I/O7 - I/O0. Standard read cycle timings and ICC read specifications apply. Refer to \"Write Operation Status\" for more information, and to each AC Characteristics section for timing diagrams. Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE input.
The device enters the CMOS standby mode when the CE pin is held at VCC ± 0.3V. (Note that this is a more restricted voltage range than VIH.) The device enters the TTL standby
is held at VIH. The device requires the mode when CE
standard access time (tCE) before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in the DC Characteristics tables represents the standby current specification.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE to VIL, and
OE to VIH. An erase operation can erase one sector,
multiple sectors, or the entire device. The Sector Address Tables indicate the address range that each sector occupies. A \"sector address\" consists of the address inputs required to uniquely select a sector. See the \"Command Definitions\" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on I/O7 - I/O0. Standard read cycle timings apply in this mode. Refer to the
Output Disable Mode
When the OE input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state.
Table 2. Sector Addresses Table
Sector A18 A17 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7
0 0 0 0 1 1 1 1
0 0 1 1 0 0 1 1
A16 0 1 0 1 0 1 0 1
Address Range 00000h - 0FFFFh 10000h - 1FFFFh 20000h - 2FFFFh 30000h - 3FFFFh 40000h - 4FFFFh 50000h - 5FFFFh 60000h - 6FFFFh 70000h - 7FFFFh
Note: All sectors are 64 Kbytes in size.
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Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on I/O7 - I/O0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5V to 12.5 V) on address pinA9. Address pins A6, A1, and AO must be as shown in Autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector address must appear on the
A29L040A Series
appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on I/O7 - I/O0.To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See \"Command Definitions\" for details on using the autoselect mode.
Table 3. A29L040A Autoselect Codes (High Voltage Method)
Description A18 - A16 A15 - A10
Manufacturer ID: AMIC Device ID: A29L040A Sector Protection
Verification Continuation ID
X X Sector Address
X
X X X
A9A8 - A7VIDVIDVID
X X X
A6VILVILVIL
A5 - A2
A1
AO VIL VIH VIL
Identifier Code on
I/O7 - I/O0
37h 92h 01h (protected) 00h (unprotected)
X
VID
X VIL
X VIH
VIH 7Fh X VILX VILX VIH
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors.
Sector protection/unprotection must be implemented using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the control pins. The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or unprotected. See \"Autoselect Mode\" for details.
Write Pulse \"Glitch\" Protection
Noise pulses of less than 5ns (typical) on OE,CE or WE do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE=VIL,
CE = VIH or WE = VIH. To initiate a write cycle, CE and WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
If WE = CE = VIL and OE = VIH during power up, the device does not accept commands on the rising edge of WE. The internal state machine is automatically reset to reading array data on the initial power-up.
Hardware Data Protection
The requirement of command unlocking sequence for programming or erasing provides data protection against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up transitions, or from system noise. The device is powered up to read array data to avoid accidentally writing data to the array.
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Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. The Command Definitions table defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE or CE, whichever happens later. All data is latched on the rising edge of WE or CE, whichever happens first. Refer to the appropriate timing diagrams in the \"AC Characteristics\" section.
A29L040A Series
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is an alternative to that shown in the Autoselect Codes (High Voltage Method) table, which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence.
A read cycle at address XX00h retrieves the manufacturer code and another read cycle at XX03h retrieves the continuation code. A read cycle at address XX01h returns the device code. A read cycle containing a sector address (SA) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. Refer to the Sector Address tables for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return to reading array data.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See \"Erase Suspend/Erase Resume Commands\" for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if I/O5 goes high, or while in the autoselect mode. See the \"Reset Command\" section, next. See also \"Requirements for Reading Array Data\" in the \"Device Bus Operations\" section for more information. The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the timing diagram.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verify the programmed cell margin. The Command Definitions table shows the address and data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using I/O7 or I/O6. See \"Write Operation Status\" for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a \"0\" back to a \"1 \". Attempting to do so may halt the operation and set I/O5 to \"1\
Polling algorithm to indicate the operation was Data
successful. However, a succeeding read will show that the data is still \"0\". Only erase operations can convert a \"0\" to a \"1\".
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend).
If I/O5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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A29L040A Series
STARTFigure 2 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in \"AC Characteristics\" for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Write ProgramCommandSequenceEmbeddedProgramalgorithm inprogressData Pollfrom SystemVerify Data ?NoYesIncrement AddressLast Address ?YesProgrammingCompletedNote : See the appropriate Command Definitions table for program command sequence.Figure 1. Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. See \"Write Operation Status\" for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched.
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Sector erase is a six-bus-cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50µs, the system need not monitor I/O3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands.
The system can monitor I/O3 to determine if the sector erase timer has timed out. (See the \" I/O3: Sector Erase Timer\" section.) The time-out begins from the rising edge of the final WE pulse in the command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. Refer to \"Write Operation Status\" for information on these status bits.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the \"AC Characteristics\" section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms.
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A29L040A Series
START Write Erase Command Sequence
Data Poll
from System Embedded Erase algorithm inprogress
No
Data = FFh ? Yes
Erasure Completed
Note : 1. See the appropriate Command Definitions table for erase command sequences. 2. See \"I/O3 : Sector Erase Timer\" for more information. Figure 2. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are \"don't cares\" when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device \"erase suspends\" all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on I/O7 - I/O0. The system can use I/O7, or I/O6 and I/O2 together, to determine if a sector is actively erasing or is erase-suspended. See \"Write Operation Status\" for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the I/O7 or I/O6 status bits, just as in the standard program operation. See \"Write Operation Status\" for more information.
The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See \"Autoselect Command Sequence\" for more information.
The system must write the Erase Resume command (address bits are \"don't care\") to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing.
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A29L040A Series
Table 4. A29L040A Command Definitions
Command Sequence (Note 1)
Read (Note 5) Reset (Note 6)
Manufacturer ID Device ID
Autoselect
Continuation ID (Note 7)
Cycles Bus Cycles (Notes 2 - 4)
First Addr Data
Second AddrData
2AA2AA2AA2AA2AA2AA2AA
55555555555555
Third
Fourth
Fifth
Sixth
AddrDataAddrData Addr Data AddrData 555555555555555555555
90909090A08080 X00X01X03SA
X02PA555555
37 92 7F 00 01 PD AA AA
2AA 2AA
55 55555
SA
1030
1 RA RD 1 XXX
F0 4 555 AA4 4
555 AA555 555 555 555
AAAAAAAA
Sector Protect Verify 4 (Note 8)
Program Chip Erase Sector Erase
Erase Suspend (Note 9) Erase Resume (Note 10)
4 6 6
555 AA1 XXX B0 1 XXX
30
Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A16 select a unique sector.
Note:
1. See Table 1 for description of bus operations. 2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operation.
4. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required. 5. No unlock or command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a read cycle.
8. The data is 00h for an unprotected sector and 01h for a protected sector. See \"Autoselect Command Sequence\" for more
information.
9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. 10. The Erase Resume command is valid only during the Erase Suspend mode.
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A29L040A Series
Write Operation Status
Several bits, I/O2, I/O3, I/O5, I/O6, and I/O7, are provided in the A29L040A to determine the status of a write operation. Table 5 and the following subsections describe the functions of these status bits. I/O7, I/O6 and I/O2 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.
STARTRead I/O7-I/O0Address = VAI/O7: Data Polling
The Data Polling bit, I/O7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device outputs on I/O7 the complement of the datum programmed to I/O7. This I/O7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to I/O7. The system must provide the program address to read valid status information on I/O7. If a program address falls within a protected sector, Data Polling on I/O7 is active for approximately 2µs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data Polling produces a \"0\" on I/O7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a \"1\" on I/O7.This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to \"1\"; prior to this, the device outputs the \"complement,\" or \"0.\" The system must provide an address within any of the sectors selected for erasure to read valid status information on I/O7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on I/O7 is active for approximately 100µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
When the system detects I/O7 has changed from the complement to true data, it can read valid data at I/O7 - I/O0 on the following read cycles. This is because I/O7 may change asynchronously with I/O0 - I/O6 while Output Enable (OE) is asserted low. The Polling Timings (During Embedded Algorithms) figure in Data
the \"AC Characteristics\" section illustrates this. Table 5 shows the outputs for Data Polling on I/O7. Figure 3 shows the Data Polling algorithm.
YesI/O7 = Data ?NoNoI/O5 = 1?YesRead I/O7 - I/O0Address = VAYesI/O7 = Data ?NoFAILPASSNote :1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address.2. I/O7 should be rechecked even if I/O5 = \"1\" because5. I/O7 may change simultaneously with I/OFigure 3. Data Polling AlgorithmPRELIMINARY (March, 2005, Version 0.0) 11
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I/O6: Toggle Bit I
Toggle Bit I on I/O6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause I/O6 to toggle. (The system may use either OE or CE to control the read cycles.) When the operation is complete, I/O6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, I/O6 toggles for approximately 100µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), I/O6 toggles. When the device enters the Erase Suspend mode, I/O6 stops toggling. However, the system must also use I/O2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use I/O7 (see the subsection on \" I/O7 : Data Polling\").
If a program address falls within a protected sector, I/O6 toggles for approximately 2µs after the program command sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
The Write Operation Status table shows the outputs for Toggle Bit I on I/O6. Refer to Figure 4 for the toggle bit algorithm, and to the Toggle Bit Timings figure in the \"AC Characteristics\" section for the timing diagram. The I/O2 vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form. See also the subsection on \" I/O2: Toggle Bit II\".
A29L040A Series
Reading Toggle Bits I/O6, I/O2
Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read I/O7 - I/O0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on I/O7 - I/O0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of I/O5 is high (see the section on I/O5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as I/O5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and I/O5 has not gone high. The system may continue to monitor the toggle bit and I/O5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4).
I/O5: Exceeded Timing Limits
I/O5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions I/O5 produces a \"1.\" This is a failure condition that indicates the program or erase cycle was not successfully completed.
The I/O5 failure condition may appear if the system tries to program a \"1 \"to a location that is previously programmed to \"0.\" Only an erase operation can change a \"0\" back to a \"1.\" Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, I/O5 produces a \"1.\"
Under both these conditions, the system must issue the reset command to return the device to reading array data.
I/O2: Toggle Bit II
The \"Toggle Bit II\" on I/O2, when used with I/O6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE pulse in the command sequence. I/O2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But I/O2 cannot distinguish whether the sector is actively erasing or is erase-suspended. I/O6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 5 to compare outputs for I/O2 and I/O6.
Figure 4 shows the toggle bit algorithm in flowchart form, and the section \" I/O2: Toggle Bit II\" explains the algorithm. See also the \" I/O6: Toggle Bit I\" subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The I/O2 vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form.
I/O3: Sector Erase Timer
After writing a sector erase command sequence, the system may read I/O3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, I/O3 switches from \"0\" to \"1.\" The system may ignore I/O3 if the system can guarantee that the time between additional sector erase commands will always be less than 50µs. See also the \"Sector Erase Command Sequence\" section.
After the sector erase command sequence is written, the system should read the status on I/O7 (Data Polling) or I/O6 (Toggle Bit 1) to ensure the device has accepted the command sequence, and then read I/O3. If I/O3 is \"1\internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the
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erase operation is complete. If I/O3 is \"0\accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of I/O3 prior to and following each subsequent sector erase command. If I/O3 is high on the second status check, the last command might not have been accepted. Table 5 shows the outputs for I/O3.
A29L040A Series
STARTRead I/O7-I/O0Read I/O7-I/O0(Note 1)Toggle Bit= Toggle ?YesNoNoI/O5 = 1?YesRead I/O7 - I/O0Twice(Notes 1,2)Toggle Bit= Toggle ?NoYesProgram/EraseOperation NotCommplete, WriteReset CommandProgram/EraseOperationCommpleteNotes :1. Read toggle bit twice to determine whether or not it is toggling. See text.2. Recheck toggle bit because it may stop toggling as I/O5 changes to \"1\". See text.Figure 4. Toggle Bit AlgorithmPRELIMINARY (March, 2005, Version 0.0) 13
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Table 5. Write Operation Status
Operation Standard Mode Erase Suspend Mode Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspend Sector Erase-Suspend-Program Notes:
A29L040A Series
I/O7 I/O6 I/O5 I/O3 I/O2 (Note 1) (Note 2) (Note 1) I/O7 0 Toggle 0 N/A No toggle Toggle 0 1 Toggle 1 No toggle 0 N/A Toggle Data Data Data Data Data I/O7 Toggle 0 N/A N/A 1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “I/O5: Exceeded Timing Limits” for more information.
Maximum Negative Input Overshoot
20ns+0.8V20ns-0.5V-2.0V20ns
Maximum Positive Input Overshoot
20ns
VCC+2.0VVCC+0.5V2.0V20ns20ns
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DC Characteristics
CMOS Compatible
Parameter Parameter Description Symbol ILI Input Load Current ILIT ILO ICC1 ICC2 ICC3 VIL VIH VID VOL VOH1 VOH2 A9 Input Load Current Output Leakage Current VCC Active Read Current (Notes 1,2) VCC Active Program/Erase Current (Notes 2,3,4) VCC Standby Current (Notes 2, 5) Input Low Level Input High Level Voltage for Autoselect and Sector Protect Output Low Voltage Output High Voltage VCC = 3.3 V IOL = 4 mA, VCC = VCC Min IOH = -2.5 mA, VCC = VCC Min IOH = -100 µA. VCC = VCC Min Test Description VIN = VSS to VCC, VCC = VCC Max VCC = VCC Max, A9 = 12.5V VOUT = VSS to VCC, VCC = VCC Max A29L040A Series
Min. -0.5 0.7 x VCC 11.5 0.85 x VCC VCC-0.4 Typ. Max. Unit 4 20 1 ±1.0 35 ±1.0 10 µAµAµAmA CE = VIL, OE = VIH CE = VIL, OE = VIH CE = VCC ± 0.3 V 30 mA 5 µAV V V V V V 0.8 VCC+0.312.5 0.45 Notes:
1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz). The frequency component typically is less than 2 mA/MHz, withOEat VIH. 2. Maximum ICC specifications are tested with VCC = VCC max.
3. ICC active while Embedded Algorithm (program or erase) is in progress. 4. Not 100% tested.
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AC Characteristics
Read Only Operations Parameter Symbols JEDEC tAVAV tAVQV tELQV tGLQV tOEH Output Enable Hold Time (Note 2) Std tRC tACC tCE tOE Read Cycle Time (Note 2) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Read Toggle and A29L040A Series
Speed Description Test Setup Unit-70 Min. Max. Max. Max. Min. Min. Max. Max. Min. 70 70 70 30 0 10 20 20 0 ns ns ns ns ns ns ns ns ns CE = VIL OE = VIL OE = VIL Data Polling tEHQZ tGHQZ tAXQX tDF tDF tOH Chip Enable to Output High Z (Notes 1,2) Output Enable to Output High Z (Notes 1,2) Output Hold Time from Addresses, CEor OE, Whichever Occurs First Notes:
1. Output driver disable time. 2. Not 100% tested.
Timing Waveforms for Read Only Operation
Addresses CE
OE
WE
Output
0VtRCAddresses StabletACCtDFtOEtOEHtCEtOHHigh-ZHigh-ZOutput ValidPRELIMINARY (March, 2005, Version 0.0) 16
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AC Characteristics
Erase and Program Operations Parameter Symbols JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL Std tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write (OE high to WE low) Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Max. tWHWH1 tWHWH2 tWHWH1 tWHWH2 tVCS Byte Programming Operation (Note 2) Sector Erase Operation (Note 2) VCC Set Up Time (Note 1) Typ. Typ. Min. Description A29L040A Series
Speed -70 70 0 45 30 0 0 0 0 0 35 20 50 17 2 50 Unit ns ns ns ns ns ns ns ns ns ns ns µs µs sec µs CE Setup Time CE Hold Time Write Pulse Width Write Pulse Width High Notes:
1. Not 100% tested.
2. See the \"Erase and Programming Performance\" section for more information.
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Timing Waveforms for Program Operation
Program Command Sequence (last two cycles)A29L040A Series
Read Status Data (last two cycles)Addresses555hPAtAH~~tWCtASPAPACE
tCHOE
tWPWE
tCStDSData
tVCSVCC
Note : PA = program addrss, PD = program data, Dout is the true data at the program address.
A0htWPHtDHPDStatusDOUTtWHWH1Timing Waveforms for Chip/Sector Erase Operation
Erase Command Sequence (last two cycles)Read Status DataAddresses2AAhSA555h for chip erase~~VAtWCtASVAtAHCE
OEWE
tCStCHtWPHtDStDH30h10h for chip erase~~tWHWH2tWP~~tGHWL~~~~~~~~~~~~tGHWL~~~~Data
tVCSVCC
55hInProgressCompleteNote : SA = Sector Address. VA = Valid Address for reading status data.~~~~PRELIMINARY (March, 2005, Version 0.0) 18
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Timing Waveforms for Data Polling (During Embedded Algorithms)
tRCAddressesVAtACCCEtCHOEtOEHWEtDFtOHtCEA29L040A Series
~~VAVA~~~~tOE~~~~High-ZI/O7ComplementComplementTrueValid Data~~High-ZNote : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Timing Waveforms for Toggle Bit (During Embedded Algorithms)
tRCAddressesVAtACCCEtCHOEtOEHWEtOHtDFtCEVA~~I/O0 - I/O6Status DataStatus DataTrueValid Data~~VAVAtOEI/O6 , I/O2Valid Status(first read)Valid Status(second read)~~Valid Status(stop togging)~~~~~~Valid StatusNote: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
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Timing Waveforms for I/O2 vs. I/O6
A29L040A Series
~~~~~~~~WEEraseErase SuspendReadEraseSuspendProgramErase SuspendReadErase~~EraseCompleteEnterEmbeddedErasingEraseSuspendEnter EraseSuspend ProgramEraseResumeI/O2~~~~~~I/O6~~~~~~~~~~I/O2 and I/O6 toggle with OE and CENote : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section \"Write Operation Statue\" for more information.
AC Characteristics
Erase and Program Operations Alternate CE Controlled Writes
Parameter Symbols JEDEC Std tAVAV tAVEL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tWC Write Cycle Time (Note 1) Min. Min. Min. Min. Min. Min. tAS Address Setup Time tAH Address Hold Time tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Data Setup Time Data Hold Time Read Recover Time Before Write Description Speed -70 70 0 45 30 0 0 ns ns ns ns ns ns Unit WE Setup Time WE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation (Note 2) Sector Erase Operation (Note 2) Min. 0 ns Min. 0 ns Min. Min. 35 20 ns ns Typ. 17 µs Typ. 2 sec Notes:
3. Not 100% tested.
4. See the \"Erase and Programming Performance\" section for more information.
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Timing Waveforms for Alternate CE Controlled Write Operation
PA for programSA for sector erase555 for chip eraseData PollingA29L040A Series
555 for program2AA for erase~~AddressestWCtWHWEtAStAHPAOEtCPtCPHtWStDStDHDatatRHA0 for program55 for erasePD for program30 for sector erase10 for chip eraseI/O7DOUTtBUSYtWHWH1 or 2CENote :1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.2. Figure indicates the last two bus cycles of the command sequence.Erase and Programming Performance
Parameter
Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3)
Typ. (Note 1)
2 11 17 6
Max. (Note 2)
8 64 200 13.5
Unit sec sec µs sec
Comments
Excludes 00h programming prior to erasure (Note 4) Excludes system-level overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 100,000 cycles. Additionally, programming typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
~~~~~~tGHEL~~~~PRELIMINARY (March, 2005, Version 0.0) 21
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Test Conditions
Test Specifications
Test Condition
Output Load
Output Load Capacitance, CL(including jig capacitance) Input Rise and Fall Times Input Pulse Levels
Input timing measurement reference levels Output timing measurement reference levels
30 5 0.0 - 3.0 1.5 1.5 -70
A29L040A Series
Unit
1 TTL gate
pF ns V V V
Test Setup
3.3 V2.7 KΩDeviceUnderTestCL6.2 KΩDiodes = IN3064 or EquivalentPRELIMINARY (March, 2005, Version 0.0) 22
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Latch-up Characteristics
A29L040A Series
Description Min. Max. Input Voltage with respect to VSS on all I/O pins VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.
-1.0V -100 mA
VCC+1.0V +100 mA
TSOP Pin Capacitance
Parameter Symbol
Parameter Description
Test Setup VIN=0 VOUT=0 VIN=0
Typ. 6 8.5 7.5
Max. 7.5 12 9
Unit pF pF pF
CIN Input Capacitance COUT CIN2
Output Capacitance Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
PLCC Pin Capacitance
Parameter Symbol
CIN COUT CIN2
Parameter Description
Input Capacitance Output Capacitance Control Pin Capacitance
Test Setup VIN=0 VOUT=0 VPP=0
Typ. 4 8 8
Max. Unit 6 12 12
pF pF pF
Notes:
3. Sampled, not 100% tested.
4. Test conditions TA = 25°C, f = 1.0MHz
Data Retention
Parameter
Minimum Pattern Data Retention Time
Test Conditions
150°C 125°C
Min
Unit
10 Years 20 Years
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Ordering Information
Access Time
(ns)
Active Read Current Typ. (mA)
Program/Erase
Current Typ. (mA)
Standby Current Typ. (µA)
A29L040A Series
Part No. A29L040A-70 A29L040A-70F A29L040AL-70 A29L040AL-70F A29L040AV-70
Package 32-pin DIP 32-pin Pb-Free DIP 32-pin PLCC 32-pin Pb-Free PLCC 32-pin TSOP (8mm X 20mm)
A29L040AV-70F
32-pin Pb-Free TSOP
70 4 20 0.2 (8mm X 20mm)
32-pin sTSOP
(8mm X 13.4mm) 32-pin Pb-Free sTSOP (8mm X 13.4mm)
32-pin sTSOP (8mm X 14mm)
A29L040AX-70
A29L040AX-70F
A29L040AY-70
A29L040AY-70F
32-pin Pb-Free sTSOP
(8mm X 14mm)
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Package Information
P-DIP 32L Outline Dimensions
A29L040A Series
unit: inches/mm
D3217E116E1CA2AA1Base PlaneSeating PlaneBB1eθEAL
Symbol Dimensions in inches Min NomDimensions in mm Max- - 5.334- - 3.9124.039- - - 42.03713.89415.49417.018- 3.55615° 3.785Max Min Nom
A - - 0.210A1 0.015A2 0.149B B1 C 0.1540.159- - 0.381- 0.018- 0.050- 0.0101.6500.5420.6000.6500.130- - - - 1.6550.5470.6100.6700.14015° - 0.457- 1.270- 0.25441.9113.76715.24016.5103.302- D 1.645E 0.537E1 0.590EA 0.630e L 0.120θ 0° 41.78313.6414.98616.0023.0480° - 0.100- - 2.540Notes:
1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins.
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Package Information
PLCC 32L Outline Dimension
HDD135A29L040A Series
unit: inches/mm
1443220302129A2AHE 1Eb1GDyDA1ebGEθLc
Dimensions in inches Min NomDimensions in mm MaxSymbol Max Min NomA - - 0.134A1 0.0185A2 0.105b1 0.026b 0.016C 0.008D 0.547E 0.447e 0.044GD 0.490GE HD 0.3900.5850.1100.0280.0180.0100.5500.4500.0500.5100.4100.5900.4900.0900.1150.0320.0210.0140.5530.4530.0560.5300.4300.5950.4950.095- - 3.40- - 2.80 2.930.71 0.810.46 0.540.25413.9711.4312.9510.4114.9912.450.3514.0511.5113.4610.9215.1112.572.670.660.410.2013.8911.351.1212.459.9114.8612.321.91- - 0.471.27 1.42HE 0.485L 0.075y θ 2.29 2.41- - 0.0030° - 10° - - 0.0750° - 10° Notes:
1. Dimensions D and E do not include resin fins.
2. Dimensions GD & GE are for PC Board surface mount pad pitch design reference only.
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Package Information
A29L040A Series
TSOP 32L TYPE I (8 X 20mm) Outline Dimensions
Dunit: inches/mm
eA2EA1cθLLEHDDetail \"A\"Detail \"A\"yDSbA
Symbol Dimensions in inchesMin NomDimensions in mmMax- - 1.200.05 - 0.150.95 1.00 1.050.18 0.22 0.270.11 - 0.2018.3018.400.50 BSC 18.50- 8.00 8.10Max Min NomA - - 0.047A1 0.002A2 0.037b 0.007c 0.004D 0.720e HD 0.779L 0.016LE - 0.0060.0390.0090.7240.020 BSC 0.7870.0200.7950.0240.0410.0110.7280.319- 0.008E - 0.31519.8020.0020.200.40 0.50 0.60- - 0.50- - 0.080° - 5° - 0.032- - 0.80 - S - - 0.020y - - 0.003θ 0° - 5° Notes:
1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash.
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Package Information
sTSOP 32L TYPE I (8 X 13.4mm) Outline Dimensions
A29L040A Series
unit: inches/mm
eA2EA1cθLLEDetail \"A\"D1DDetail \"A\"D0.076MMSEATING PLANESbA
Symbol A Dimensions in inchesMin Nom- - 0.0490.0390.0080.00590.3150.020 TYP 0.5280.4650.0200.03150.0109 TYP 0° 3° 5° 0° 0.5350.4690.0280.035513.2011.700.7000.0410.0090.00620.319Dimensions in mmMax- - 1.25- - 0.95 1.00 1.050.17 0.20 0.230.1420.1500.50 TYP 13.4011.800.8000.278 TYP 3° 5° 13.6011.900.9000.1587.90 8.00 8.10Max Min Nom
A1 0.002A2 0.037b 0.007c 0.0056E 0.311e D 0.520D1 0.461L 0.012LE 0.0275S θ - - 0.05 0.30 0.50 0.70Notes:
1. The maximum value of dimension D1 includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash.
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AMIC Technology, Corp.
元器件交易网www.cecb2b.com
Package Information
sTSOP 32L TYPE I (8 X 14mm) Outline Dimensions
Pin1A29L040A Series
unit: inches/mm
0.254Gage PlaneθLDetail \"A\"A2ED1DDetail \"A\"A1cebyA
Symbol A Dimensions in inchesMin Nom- - 0.047- 0.0060.0390.00870.3150.0410.01060.319Dimensions in mmMax- - 1.200.05 - 0.150.95 1.00 1.050.17 0.22 0.270.10 - 0.217.90 8.00 8.10Max Min Nom A1 0.002A2 0.037b 0.0067c 0.004E 0.311e - 0.0083- 0.01970.5510.4880.024- - 0.50 - 0.5590.4920.02813.8012.3014.0012.4014.2012.50D 0.543D1 0.484L 0.020y 0.000θ 0° 0.50 0.60 0.700.00 - 0.0760° 3° 5° - 0.0033° 5° Notes:
1. Dimension E does not include mold flash.
2. Dimension D1 does not include interlead flash. 3. Dimension b does not include dambar protrusion.
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D
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