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DS90LV049HHighTemperature3VLVDSDualLineDriverandReceiverPairSeptember2005

DS90LV049H

HighTemperature3VLVDSDualLineDriverandReceiverPair

GeneralDescription

TheDS90LV049HisadualCMOSflow-throughdifferentiallinedriver-receiverpairdesignedforapplicationsrequiringultralowpowerdissipation,exceptionalnoiseimmunity,andhighdatathroughput.Thedeviceisdesignedtosupportdataratesinexcessof400MbpsutilizingLowVoltageDifferentialSignaling(LVDS)technology.

TheDS90LV049HdriversacceptLVTTL/LVCMOSsignalsandtranslatethemtoLVDSsignals.ThereceiversacceptLVDSsignalsandtranslatethemto3VCMOSsignals.TheLVDSinputbuffershaveinternalfailsafebiasingthatplacestheoutputstoaknownH(high)stateforfloatingreceiverinputs.Inaddition,theDS90LV049HsupportsaTRI-STATEfunctionforalowidlepowerstatewhenthedeviceisnotinuse.

TheENandENinputsareANDedtogetherandcontroltheTRI-STATEoutputs.Theenablesarecommontoallfourgates.

Features

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HighTemperature+125˚COperatingRangeUpto400Mbpsswitchingrates

Flow-throughpinoutsimplifiesPCBlayout50pstypicaldriverchannel-to-channelskew50pstypicalreceiverchannel-to-channelskew3.3VsinglepowersupplydesignTRI-STATEoutputcontrol

Internalfail-safebiasingofreceiverinputsLowpowerdissipation(70mWat3.3Vstatic)HighimpedanceonLVDSoutputsonpowerdownConformstoTIA/EIA-644-ALVDSStandardAvailableinlowprofile16pinTSSOPpackage

ConnectionDiagram

Dual-In-Line

FunctionalDiagram

20161701

OrderNumberDS90LV049HMT

OrderNumberDS90LV049HMTX(TapeandReel)

SeeNSPackageNumberMTC16

20161702

TruthTable

ENLorOpen

HLorOpen

H

ENLorOpenLorOpen

HH

LVDSOutOFFONOFFOFF

LVCMOSOut

OFFONOFFOFF

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DS90LV049HAbsoluteMaximumRatings(Note1)

IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/Distributorsforavailabilityandspecifications.SupplyVoltage(VDD)LVCMOSInputVoltage(DIN)LVDSInputVoltage(RIN+,RIN-)EnableInputVoltage(EN,EN)LVCMOSOutputVoltage(ROUT)LVDSOutputVoltage(DOUT+,DOUT-)

LVCMOSOutputShortCircuitCurrent(ROUT)

LVDSOutputShortCircuitCurrent(DOUT+,DOUT−)LVDSOutputShortCircuitCurrentDuration(DOUT+,DOUT−)StorageTemperatureRange

Continuous−65˚Cto+150˚C

24mA100mA

−0.3Vto+4V

−0.3Vto(VDD+0.3V)

−0.3Vto+3.9V

−0.3Vto(VDD+0.3V)−0.3Vto(VDD+0.3V)

−0.3Vto+3.9V

LeadTemperatureRangeSoldering(4sec.)

MaximumJunctionTemperature

MaximumPackagePowerDissipation@+25˚CMTCPackageDerateMTCPackageESDRating

(HBM,1.5kΩ,100pF)(MM,0Ω,200pF)

≥7kV≥250V866mW

6.9mW/˚Cabove+25˚C

+260˚C+150˚C

RecommendedOperatingConditions

Min

SupplyVoltage(VDD)OperatingFreeAirTemperature(TA)

−40

+25

+125

˚C

+3.0

Typ+3.3

Max+3.6

UnitsV

ElectricalCharacteristics

Oversupplyvoltageandoperatingtemperatureranges,unlessotherwisespecified.(Notes2,4,6)SymbolVIHVILIIHIILVCL|VOD|∆VODVOS∆VOSIOSParameter

InputHighVoltageInputLowVoltageInputHighCurrentInputLowCurrentInputClampVoltageDifferentialOutputVoltageChangeinMagnitudeofVODforComplementaryOutputStatesOffsetVoltage

ChangeinMagnitudeofVOSforComplementaryOutputStatesOutputShortCircuitCurrent(Note14)

DifferentialOutputShortCircuitCurrent(Note14)Power-offLeakageOutputTRI-STATECurrent

ENABLED,

DIN=VDD,DOUT+=0VorDIN=GND,DOUT−=0VENABLED,VOD=0VVOUT=0Vor3.6VVDD=0VorOpenEN=0VandEN=VDDVOUT=0VorVDDVCM=1.2V,0.05V,2.35V

-100

VID=100mV,VDD=3.3VVDD=3.6V

VIN=0Vor2.8VVDD=0V

VIN=0Vor2.8Vor3.6V

RIN+RIN-0.05−12−10−20−10

DOUT−DOUT+RL=100Ω(Figure1)VIN=VDDVIN=GNDICL=−18mA

DINENENConditions

Pin

Min2.0GND−10−10−1.5250

1−0.1−0.63501

1.125

1.231−5.8

450351.37525−9.0

Typ

MaxVDD0.8+10+10

UnitsVVµAµAVmV|mV|V|mV|mA

LVCMOSInputDCSpecifications(DriverInputs,ENABLEPins)

LVDSOutputDCSpecifications(DriverOutputs)

IOSDIOFFIOZ−5.8−9.0+20+10

mAµAµA

±1±1

LVDSInputDCSpecifications(ReceiverInputs)VTHVTLVCMRDifferentialInputHighThresholdDifferentialInputLowThresholdCommon-ModeVoltageRange

−15−15

335

mVmVVµAµA

±4±1

+12+10

IINInputCurrent

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DS90LV049HElectricalCharacteristics

SymbolVOHVOLIOZIDDIDDZParameter

OutputHighVoltageOutputLowVoltageOutputTRI-STATECurrentPowerSupplyCurrent(Note3)TRI-StateSupplyCurrent

(Continued)

Oversupplyvoltageandoperatingtemperatureranges,unlessotherwisespecified.(Notes2,4,6)

Conditions

IOH=-0.4mA,VID=200mVIOL=2mA,VID=200mVDisabled,VOUT=0VorVDDEN=3.3VEN=0V

ROUT-10

Pin

Min2.7

Typ3.30.05

0.25+103525Max

UnitsVVµAmAmA

LVCMOSOutputDCSpecifications(ReceiverOutputs)

±1

2115

GeneralDCSpecifications

VDDSwitchingCharacteristics

VDD=+3.3V±10%,TA=−40˚Cto+125˚C(Notes4,13)SymboltPHLDtPLHDtSKD1tSKD2tSKD3tTLHtTHLtPHZtPLZtPZHtPZLfMAXtPHLtPLHtSK1tSK2tSK3tTLHtTHLtPHZtPLZtPZHtPZLfMAXParameter

DifferentialPropagationDelayHightoLowDifferentialPropagationDelayLowtoHighDifferentialPulseSkew|tPHLD−tPLHD|(Notes5,7)

DifferentialChannel-to-ChannelSkew(Notes5,8)

DifferentialPart-to-PartSkew(Notes5,9)RiseTime(Note5)FallTime(Note5)DisableTimeHightoZDisableTimeLowtoZEnableTimeZtoHighEnableTimeZtoLow

MaximumOperatingFrequency(Note16)PropagationDelayHightoLowPropagationDelayLowtoHighPulseSkew|tPHL−tPLH|(Note10)Channel-to-ChannelSkew(Note11)Part-to-PartSkew(Note12)RiseTime(Note5)FallTime(Note5)DisableTimeHightoZDisableTimeLowtoZEnableTimeZtoHighEnableTimeZtoLow

MaximumOperatingFrequency(Note17)

(Figure8andFigure9)(Figure6andFigure7)RL=100Ω

(Figure4andFigure5)

112000.50.50000.30.3332.52.5200

0.90.755.65.44.64.6250

0

RL=100Ω

(Figure2andFigure3)

000.20.2

0.40.41.51.533250220.050.05

3.53.50.40.51.01.41.48877

Conditions

Min

Typ0.70.70.050.05

Max220.40.51.0113366

UnitsnsnsnsnsnsnsnsnsnsnsnsMHznsnsnsnsnsnsnsnsnsnsnsMHz

LVDSOutputs(DriverOutputs)

LVCMOSOutputs(ReceiverOutputs)

Note1:“AbsoluteMaximumRatings”arethosevaluesbeyondwhichthesafetyofthedevicecannotbeguaranteed.Theyarenotmeanttoimplythatthedevicesshouldbeoperatedattheselimits.Thetableof“ElectricalCharacteristics”specifiesconditionsofdeviceoperation.

Note2:Currentintodevicepinsisdefinedaspositive.Currentoutofdevicepinsisdefinedasnegative.Allvoltagesarereferencedtogroundexcept:VTH,VTL,VODand∆VOD.

Note3:Both,driverandreceiverinputsarestatic.AllLVDSoutputshave100Ωload.AllLVCMOSoutputsarefloating.Noneoftheoutputshaveanylumpedcapacitiveload.

Note4:Alltypicalvaluesaregivenfor:VDD=+3.3V,TA=+25˚C.

Note5:Theseparametersareguaranteedbydesign.ThelimitsarebasedonstatisticalanalysisofthedeviceperformanceoverPVT(process,voltage,temperature)ranges.

Note6:TheDS90LV049H’sdriversarecurrentmodedevicesandonlyfunctionwithindatasheetspecificationswhenaresistiveloadisappliedtotheiroutputs.Thetypicalrangeoftheresistorvaluesis90Ωto110Ω.

Note7:tSKD1ordifferentialpulseskewisdefinedas|tPHLD−tPLHD|.Itisthemagnitudedifferenceinthedifferentialpropagationdelaysbetweenthepositivegoingedgeandthenegativegoingedgeofthesamedriverchannel.

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DS90LV049HSwitchingCharacteristics

(Continued)

Note8:tSKD2ordifferentialchannel-to-channelskewisdefinedasthemagnitudedifferenceinthedifferentialpropagationdelaysbetweentwodriverchannelsonthesamedevice.

Note9:tSKD3ordifferentialpart-to-partskewisdefinedas|tPLHDMax−tPLHDMin|or|tPHLDMax−tPHLDMin|.Itisthedifferencebetweentheminimumandmaximumspecifieddifferentialpropagationdelays.ThisspecificationappliestodevicesatthesameVDDandwithin5˚Cofeachotherwithintheoperatingtemperaturerange.Note10:tSK1orpulseskewisdefinedas|tPHL−tPLH|.Itisthemagnitudedifferenceinthepropagationdelaysbetweenthepositivegoingedgeandthenegativegoingedgeofthesamereceiverchannel.

Note11:tSK2orchannel-to-channelskewisdefinedasthemagnitudedifferenceinthepropagationdelaysbetweentworeceiverchannelsonthesamedevice.Note12:tSK3orpart-to-partskewisdefinedas|tPLHMax−tPLHMin|or|tPHLMax−tPHLMin|.Itisthedifferencebetweentheminimumandmaximumspecifiedpropagationdelays.ThisspecificationappliestodevicesatthesameVDDandwithin5˚Cofeachotherwithintheoperatingtemperaturerange.Note13:Generatorwaveformforalltestsunlessotherwisespecified:f=1MHz,ZO=50Ω,tr≤1ns,andtf≤1ns.Note14:Outputshortcircuitcurrent(IOS)isspecifiedasmagnitudeonly,minussignindicatesdirectiononly.Note15:Allinputvoltagesareforonechannelunlessotherwisespecified.OtherinputsaresettoGND.

Note16:fMAXgeneratorinputconditions:tr=tf<1ns(0%to100%),50%dutycycle,0Vto3V.OutputCriteria:dutycycle=45%/55%,VOD>250mV,allchannelsswitching.

Note17:fMAXgeneratorinputconditions:tr=tf<1ns(0%to100%),50%dutycycle,VID=200mV,VCM=1.2V.OutputCriteria:dutycycle=45%/55%,VOH>2.7V,VOL<0.25V,allchannelsswitching.

ParameterMeasurementInformation

20161703

FIGURE1.DriverVODandVOSTestCircuit

20161704

FIGURE2.DriverPropagationDelayandTransitionTimeTestCircuit

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DS90LV049HParameterMeasurementInformation

(Continued)

20161705

FIGURE3.DriverPropagationDelayandTransitionTimeWaveforms

20161706

FIGURE4.DriverTRI-STATEDelayTestCircuit

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DS90LV049HParameterMeasurementInformation

(Continued)

20161707

FIGURE5.DriverTRI-STATEDelayWaveform

20161709

FIGURE6.ReceiverPropagationDelayandTransitionTimeTestCircuit

20161710

FIGURE7.ReceiverPropagationDelayandTransitionTimeWaveforms

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DS90LV049HParameterMeasurementInformation

(Continued)

20161711

FIGURE8.ReceiverTRI-STATEDelayTestCircuit

20161714

FIGURE9.ReceiverTRI-STATEDelayWaveforms

TypicalApplication

20161708

FIGURE10.Point-to-PointApplication

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DS90LV049HApplicationsInformation

GeneralapplicationguidelinesandhintsforLVDSdriversandreceiversmaybefoundinthefollowingapplicationnotes:LVDSOwner’sManual(lit#550062-003),AN-805,AN-808,AN-903,AN-916,AN-971,AN-977.

LVDSdriversandreceiversareintendedtobeprimarilyusedinanuncomplicatedpoint-to-pointconfigurationasisshowninFigure10.Thisconfigurationprovidesacleansignalingenvironmentforthefastedgeratesofthedrivers.There-ceiverisconnectedtothedriverthroughabalancedmediawhichmaybeastandardtwistedpaircable,aparallelpaircable,orsimplyPCBtraces.Typically,thecharacteristicdifferentialimpedanceofthemediaisintherangeof100Ω.Aterminationresistorof100Ω(selectedtomatchtheme-dia),andislocatedasclosetothereceiverinputpinsaspossible.Theterminationresistorconvertsthedriveroutputcurrent(currentmode)intoavoltagethatisdetectedbythereceiver.Otherconfigurationsarepossiblesuchasamulti-receiverconfiguration,buttheeffectsofamid-streamcon-nector(s),cablestub(s),andotherimpedancediscontinuitiesaswellasgroundshifting,noisemarginlimits,andtotalterminationloadingmustbetakenintoaccount.

TheTRI-STATEfunctionallowsthedeviceoutputstobedisabled,thusobtaininganevenlowerpowerstatewhenthetransmissionofdataisnotrequired.

TheDS90LV049Hhasaflow-throughpinoutthatallowsforeasyPCBlayout.TheLVDSsignalsononesideofthedeviceeasilyallowsformatchingelectricallengthsofthedifferentialpairtracelinesbetweenthedriverandthere-ceiveraswellasallowingthetracelinestobeclosetogethertocouplenoiseascommon-mode.NoiseisolationisachievedwiththeLVDSsignalsononesideofthedeviceandtheTTLsignalsontheotherside.

POWERDECOUPLINGRECOMMENDATIONS

Bypasscapacitorsmustbeusedonpowerpins.Usehighfrequencyceramic(surfacemountisrecommended)0.1µFand0.001µFcapacitorsinparallelatthepowersupplypinwiththesmallestvaluecapacitorclosesttothedevicesupplypin.Additionalscatteredcapacitorsovertheprintedcircuitboardwillimprovedecoupling.Multipleviasshouldbeusedtoconnectthedecouplingcapacitorstothepowerplanes.A10µF(35V)orgreatersolidtantalumcapacitorshouldbeconnectedatthepowerentrypointontheprintedcircuitboardbetweenthesupplyandground.

PCBOARDCONSIDERATIONS

Useatleast4PCBlayers(toptobottom);LVDSsignals,ground,power,TTLsignals.

IsolateTTLsignalsfromLVDSsignals,otherwisetheTTLmaycoupleontotheLVDSlines.ItisbesttoputTTLandLVDSsignalsondifferentlayerswhichareisolatedbyapower/groundplane(s).

Keepdriversandreceiversasclosetothe(LVDSportside)connectorsaspossible.

DIFFERENTIALTRACES

Usecontrolledimpedancetraceswhichmatchthedifferen-tialimpedanceofyourtransmissionmedium(i.e.cable)andterminationresistor.RunthedifferentialpairtracelinesasclosetogetheraspossibleassoonastheyleavetheIC(stubsshouldbe<10mmlong).Thiswillhelpeliminatereflectionsandensurenoiseiscoupledascommon-mode.Infact,wehaveseenthatdifferentialsignalswhichare1mmapartradiatefarlessnoisethantraces3mmapartsince

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magneticfieldcancellationismuchbetterwiththeclosertraces.Inaddition,noiseinducedonthedifferentiallinesismuchmorelikelytoappearascommon-modewhichisre-jectedbythereceiver.

Matchelectricallengthsbetweentracestoreduceskew.Skewbetweenthesignalsofapairmeansaphasediffer-encebetweensignalswhichdestroysthemagneticfieldcancellationbenefitsofdifferentialsignalsandEMIwillre-sult.(Notethevelocityofpropagation,v=c/Erwherec(thespeedoflight)=0.2997mm/psor0.0118in/ps).Donotrelysolelyontheautoroutefunctionfordifferentialtraces.Care-fullyreviewdimensionstomatchdifferentialimpedanceandprovideisolationforthedifferentiallines.Minimizethenum-berorviasandotherdiscontinuitiesontheline.

Avoid90˚turns(thesecauseimpedancediscontinuities).Usearcsor45˚bevels.

Withinapairoftraces,thedistancebetweenthetwotracesshouldbeminimizedtomaintaincommon-moderejectionofthereceivers.Ontheprintedcircuitboard,thisdistanceshouldremainconstanttoavoiddiscontinuitiesindifferentialimpedance.Minorviolationsatconnectionpointsareallow-able.

TERMINATION

Useaterminationresistorwhichbestmatchesthedifferen-tialimpedanceoryourtransmissionline.Theresistorshouldbebetween90Ωand130Ω.Rememberthatthecurrentmodeoutputsneedtheterminationresistortogeneratethedifferentialvoltage.LVDSwillnotworkwithoutresistorter-mination.Typically,connectingasingleresistoracrossthepairatthereceiverendwillsuffice.

Surfacemount1%to2%resistorsarebest.PCBstubs,componentlead,andthedistancefromtheterminationtothereceiverinputsshouldbeminimized.Thedistancebetweentheterminationresistorandthereceivershouldbe<10mm(12mmMAX).

PROBINGLVDSTRANSMISSIONLINES

Alwaysusehighimpedance(>100kΩ),lowcapacitance(<2pF)scopeprobeswithawidebandwidth(1GHz)scope.Improperprobingwillgivedeceivingresults.CABLESANDCONNECTORS,GENERALCOMMENTSWhenchoosingcableandconnectorsforLVDSitisimpor-tanttoremember:

Usecontrolledimpedancemedia.Thecablesandconnec-torsyouuseshouldhaveamatcheddifferentialimpedanceofabout100Ω.Theyshouldnotintroducemajorimpedancediscontinuities.

Balancedcables(e.g.twistedpair)areusuallybetterthanunbalancedcables(ribboncable,simplecoax.)fornoisereductionandsignalquality.Balancedcablestendtogener-atelessEMIduetofieldcancelingeffectsandalsotendtopickupelectromagneticradiationacommon-mode(notdif-ferentialmode)noisewhichisrejectedbythereceiver.FAIL-SAFEFEATURE

AnLVDSreceiverisahighgain,highspeeddevicethatamplifiesasmalldifferentialsignal(20mV)toCMOSlogiclevels.Duetothehighgainandtightthresholdofthere-ceiver,careshouldbetakentopreventnoisefromappearingasavalidsignal.

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DS90LV049HApplicationsInformation

(Continued)

Thereceiver’sinternalfail-safecircuitryisdesignedtosource/sinkasmallamountofcurrent,providingfail-safeprotection(astableknownstateofHIGHoutputvoltage)forfloatingreceiverinputs.

TheDS90LV049Hhastworeceivers,andifanapplicationrequiresasinglereceiver,theunusedreceiverinputsshouldbeleftOPEN.Donottieunusedreceiverinputstogroundoranyothervoltages.TheinputisbiasedbyinternalhighvaluepullupandpulldowncurrentsourcestosettheoutputtoaHIGHstate.ThisinternalcircuitrywillguaranteeaHIGH,stableoutputstateforopeninputs.

Externallowervaluepullupandpulldownresistors(forastrongerbias)maybeusedtoboostfail-safeinthepresenceofhighernoiselevels.Thepullupandpulldownresistorsshouldbeinthe5kΩto15kΩrangetominimizeloadingandwaveformdistortiontothedriver.Thecommon-modebiaspointshouldbesettoapproximately1.2V(lessthan1.75V)tobecompatiblewiththeinternalcircuitry.

FormoreinformationonfailsfebiasingofLVDSinterfacespleaserefertoAN-1194.

PinDescriptions

PinNo.10,116,75,82,31,414,159,161213

NameDINDOUT+DOUT−RIN+RIN-ROUTEN,ENVDDGND

Description

Driverinputpins,LVCMOSlevels.Thereisapull-downcurrentsourcepresent.

Non-invertingdriveroutputpins,LVDSlevels.Invertingdriveroutputpins,LVDSlevels.

Non-invertingreceiverinputpins,LVDSlevels.Thereisapull-upcurrentsourcepresent.

Invertingreceiverinputpins,LVDSlevels.Thereisapull-downcurrentsourcepresent.

Receiveroutputpins,LVCMOSlevels.

EnableandDisablepins.Therearepull-downcurrentsourcespresentatbothpins.Powersupplypin.Groundpin.

TypicalPerformanceCurves

DifferentialOutputVoltage

vsLoadResistor

PowerSupplyCurrent

vsFrequency

2016171920161721

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DS90LV049HHighTemperature3VLVDSDualLineDriverandReceiverPairPhysicalDimensions

inches(millimeters)unlessotherwisenoted

16-Lead(0.100\"Wide)MoldedThinShrinkSmallOutlinePackage,JEDEC

OrderNumberDS90LV049HMT

OrderNumberDS90LV049HMTX(TapeandReel)

NSPackageNumberMTC16

Nationaldoesnotassumeanyresponsibilityforuseofanycircuitrydescribed,nocircuitpatentlicensesareimpliedandNationalreservestherightatanytimewithoutnoticetochangesaidcircuitryandspecifications.Forthemostcurrentproductinformationvisitusatwww.national.com.LIFESUPPORTPOLICY

NATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFTHEPRESIDENTANDGENERALCOUNSELOFNATIONALSEMICONDUCTORCORPORATION.Asusedherein:

1.Lifesupportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebody,or(b)supportorsustainlife,andwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser.BANNEDSUBSTANCECOMPLIANCE

NationalSemiconductormanufacturesproductsandusespackingmaterialsthatmeettheprovisionsoftheCustomerProductsStewardshipSpecification(CSP-9-111C2)andtheBannedSubstancesandMaterialsofInterestSpecification(CSP-9-111S2)andcontainno‘‘BannedSubstances’’asdefinedinCSP-9-111S2.LeadfreeproductsareRoHScompliant.

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