Method for fabricating thin film transistors

专利名称：Method for fabricating thin film transistors发明人：Chuan-Yi Wu,Yung-Chia Kuan,Chia-Chien

Lu,Chin-Chuan Lai

申请号：US11163602申请日：20051025公开号：US07229863B2公开日：20070612

专利附图：

摘要：A method for fabricating a thin film transistor is provided. First, a gate is formedon a substrate. A gate-insulating layer is formed to cover the gate. A patternedsemiconductor layer is formed on the gate-insulating layer. A first and a second

conductive layer are formed on the patterned semiconductor layer in sequence. Thesecond conductive layer is patterned such that each side of thereof above the gate has ataper profile and the first conductive layer is exposed. A first plasma process is

performed to transform the surface and the taper profile of the second conductive layerinto a first protection layer. The first conductive layer not covered by the first protectionlayer and the second conductive layer is removed to form a source/drain. The

source/drain is with fine dimensions and the diffusion of metallic ions from the secondconductive layer to the patterned semiconductor layer can be avoided.

申请人：Chuan-Yi Wu,Yung-Chia Kuan,Chia-Chien Lu,Chin-Chuan Lai

地址：Taipei TW,Taipei TW,Taipei TW,Taoyuan County TW

国籍：TW,TW,TW,TW

代理机构：Jiang Chyun IP Office

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