专利名称：Silicon microstructures and process for their
fabrication
发明人：Leslie A. Field,Phillip W. Barth申请号：US08/749588申请日：19961115公开号：US05709773A公开日：19980120
摘要：A flexible and efficient bulk micromachining method for fabricating a novelmicrostructure that is bounded by substantially planar surfaces meeting only atsubstantially right angle corner features. The novel microstructure of the presentinvention is useful as a spacer in assembly processes where high accuracy is required, suchas precise positioning of optical fibers or conductors. In the preferred embodiment, themicrostructure of the present invention includes a shelf feature disposed along a heightdimension of the microstructure, which is required for some applications.
The bulk micromachining method of the present invention includes providing a firstsubstrate having a top planar surface and an opposing planar surface. The opposingsurface of the substrate is anisotropically etched to provide a first thinned region. Thetop surface of the first substrate is anisotropically etched so that a first recessed featurehaving a vertical side is made integral with the first thinned region. Similarly, a secondsubstrate having a top planar surface and an opposing planar surface is provided. Theopposing surface of the second substrate is anisotropically etched to provide a secondthinned region. The top surface of the second substrate is anisotropically etched so thata second recessed feature having a vertical side wall is made integral with the second
thinned region. The top surface of the first substrate is aligned and coupled with the topsurface of the second substrate to produce the desired microstructure. The substratesare cut or sawn to free the microstructure.
申请人：HEWLETT-PACKARD CO.
代理人：Jack A. Lenell
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