2N3904(三极管)

2N3904 / MMBT3904 / PZT39042N3904MMBT3904CPZT3904CECBECTO-92ESOT-23Mark: 1ABSOT-223BNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* T = 25°C unless otherwise notedASymbolVCEOVCBOVEBOICTJ, TstgCollector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageParameterValue40606.0200-55 to +150UnitsVVVmA°CCollector Current - ContinuousOperating and Storage Junction Temperature Range*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T = 25°C unless otherwise notedASymbolPDRθJCRθJACharacteristicTotal Device DissipationDerate above 25°CThermal Resistance, Junction to CaseThermal Resistance, Junction to Ambient2N39046255.083.3200Max*MMBT39043502.8357**PZT39041,0008.0125UnitsmWmW/°C°C/W°C/W*Device mounted on FR-4 PCB 1.6\" X 1.6\" X 0.06.\"**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 2001 Fairchild Semiconductor Corporation2N3904/MMBT3904/PZT3904, Rev A2N3904 / MMBT3904 / PZT3904NPN General Purpose Amplifier(continued)Electrical Characteristics T = 25°C unless otherwise notedASymbolParameterTest ConditionsMinMaxUnitsOFF CHARACTERISTICSV(BR)CEOV(BR)CBOV(BR)EBOIBLICEXCollector-Emitter BreakdownVoltageCollector-Base Breakdown VoltageEmitter-Base Breakdown VoltageBase Cutoff CurrentCollector Cutoff CurrentIC = 1.0 mA, IB = 0IC = 10 µA, IE = 0IE = 10 µA, IC = 0VCE = 30 V, VEB = 3VVCE = 30 V, VEB = 3V40606.05050VVVnAnAON CHARACTERISTICS*hFEDC Current GainIC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 VIC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mAIC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA40701006030300VCE(sat)VBE(sat)Collector-Emitter Saturation VoltageBase-Emitter Saturation Voltage0.650.20.30.850.95VVVVSMALL SIGNAL CHARACTERISTICSfTCoboCiboNFCurrent Gain - Bandwidth ProductOutput CapacitanceInput CapacitanceNoise FigureIC = 10 mA, VCE = 20 V,f = 100 MHzVCB = 5.0 V, IE = 0,f = 1.0 MHzVEB = 0.5 V, IC = 0,f = 1.0 MHzIC = 100 µA, VCE = 5.0 V,RS =1.0kΩ,f=10 Hz to 15.7kHz3004.08.05.0MHzpFpFdBSWITCHING CHARACTERISTICStdtrtstfDelay TimeRise TimeStorage TimeFall TimeVCC = 3.0 V, VBE = 0.5 V,IC = 10 mA, IB1 = 1.0 mAVCC = 3.0 V, IC = 10mAIB1 = IB2 = 1.0 mA353520050nsnsnsns*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%Spice ModelNPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2pItf=.4 Vtf=4 Xtf=2 Rb=10)2N3904 / MMBT3904 / PZT3904NPN General Purpose Amplifier(continued)Typical Characteristics500400125 °CV = 5VCE VC S T - COLLECTOR-EMITTER VOLTAGE (V)EAh F E - TYPICAL PULSED CURRENT GAINTypical Pulsed Current Gainvs Collector CurrentCollector-Emitter SaturationVoltage vs Collector Current 0.15β = 10125 °C30025 °C0.125 °C20010000.1- 40 °C0.05- 40 °C110I - COLLECTOR CURRENT (mA)C1000.1110I - COLLECTOR CURRENT (mA)C100V E ( O )- BASE-EMITTER ON VOLTAGE (V)BNVB S A T - BASE-EMITTER VOLTAGE (V)EBase-Emitter SaturationVoltage vs Collector Current 1β = 10Base-Emitter ON Voltage vsCollector Current1V = 5VCE 0.8- 40 °C25 °C0.8- 40 °C25 °C0.6125 °C0.6125 °C0.40.40.1110I - COLLECTOR CURRENT (mA)C1000.20.1110I - COLLECTOR CURRENT (mA)C100Collector-Cutoff Currentvs Ambient TemperatureIC B - COLLECTOR CURRENT (nA)O500CAPACITANCE (pF)10Capacitance vs Reverse Bias Voltagef = 1.0 MHz1001010.1V = 30VCB32CoboC ibo255075100125°T - AMBIENT TEMPERATURE ( C)A15010.1110REVERSE BIAS VOLTAGE (V)1002N3904 / MMBT3904 / PZT3904NPN General Purpose Amplifier(continued)Typical Characteristics (continued)Noise Figure vs Frequency12NF - NOISE FIGURE (dB)108200.1µA, R = 500 ΩI = 100 CSNoise Figure vs Source Resistance12I = 1.0 mACµAI = 50 CΩ R = 1.0 kSI = 0.5 mACΩ R = 200SNF - NOISE FIGURE (dB)I = 1.0 mACΩ R = 200SV = 5.0VCE10I = 5.0 mAC8200.1I = 50 µACI = 100 µAC110f - FREQUENCY (kHz)100110R - SOURCE RESISTANCE ( )kΩS100Current Gain and Phase Anglevs Frequency504035302520151050hfeP - POWER DISSIPATION (W)DPower Dissipation vsAmbient Temperature02040608010012014016018010001h f - CURRENT GAIN (dB)e0.75SOT-223TO-92θ - DEGREESθ0.5SOT-230.25V = 40VCEI = 10 mAC110100f - FREQUENCY (MHz)00255075100oTEMPERATURE ( C)125150Turn-On Time vs Collector Current500I = I = B1B240VTIME (nS)10015Vt CCr@V = 3.0V2.0V105t CBd@V = 0V110I - COLLECTOR CURRENT (mA)C100Ic10Rise Time vs Collector Current500V = 40VCCt r - RISE TIME (ns)I = I = B1B2Ic10100T = 125°CJT = 25°CJ105110I - COLLECTOR CURRENT (mA)C1002N3904 / MMBT3904 / PZT3904NPN General Purpose Amplifier(continued)Typical Characteristics (continued)Storage Time vs Collector Current500t - STORAGE TIME (ns)ST = 25°CJFall Time vs Collector Current500I = I = B1B2t f - FALL TIME (ns)T = 125°CJIc10I = I = B1B2Ic10V = 40VCC100T = 125°CJ100T = 25°CJ105110I - COLLECTOR CURRENT (mA)C100105110I - COLLECTOR CURRENT (mA)C100Current GainV = 10 VCE f = 1.0 kHzoT = 25 CA Output Admittanceµh o mhos)e - OUTPUT ADMITTANCE ( 100V = 10 VCE f = 1.0 kHzoT = 25 CA 500h f e - CURRENT GAIN10010100.11I - COLLECTOR CURRENT (mA)C1010.11I - COLLECTOR CURRENT (mA)C10100h i e - INPUT IMPEDANCE (kΩ )4h - VOLTAGE FEEDBACK RATIO (x10 )r e Input ImpedanceV = 10 VCE f = 1.0 kHzoT = 25 CA Voltage Feedback Ratio10732V = 10 VCE f = 1.0 kHzoT = 25 CA 1010.10.1_1I - COLLECTOR CURRENT (mA)C1010.11I - COLLECTOR CURRENT (mA)C102N3904 / MMBT3904 / PZT3904NPN General Purpose Amplifier(continued)Test Circuits3.0 V 300 ns10.6 VDuty Cycle = 2%0 - 0.5 V< 1.0 ns10 KΩ275 ΩC1 < 4.0 pFFIGURE 1: Delay and Rise Time Equivalent Test Circuit3.0 V10 < < t1 < 500 µst1 10.9 V275 ΩDuty Cycle = 2%010 KΩC1 < 4.0 pF - 9.1 V< 1.0 ns1N916FIGURE 2: Storage and Fall Time Equivalent Test CircuitTRADEMARKS

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This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

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