AP4515GM

Pb Free Plating Product

Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Lower Gate Charge

▼ Fast Switching Performance▼ RoHS Compliant

SO-8SO-8

S1

D2D1D2D1D1D1

D2D2

N AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET

N-CHBVDSS

RDS(ON)ID

G2G2S2S2G1G1S1

35V22mΩ7.7A-35V40mΩ-5.7A

P-CHBVDSS

RDS(ON)ID

D1Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

G1D2G2S1S2The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltageapplications such as DC/DC converters.

Absolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentContinuous Drain CurrentPulsed Drain Current1Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

33

Rating N-channel

35 ±20 7.7 6.2 30 2.0 0.016 -55 to 150 -55 to 150

P-channel

-35±12-5.7-4.6-30

UnitsVVAAAW W/℃℃℃

Thermal Data

SymbolRthj-a

Parameter

Thermal Resistance Junction-ambient3

Max.

Value62.5

Unit℃/W

Data and specifications subject to change without notice

200408051-1/7

AP4515GM

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown Voltage

2

Test Conditions

VGS=0V, ID=250uAVGS=10V, ID=7AVGS=4.5V, ID=5AVDS=VGS, ID=250uAVDS=10V, ID=7AVDS=30V, VGS=0VVDS=24V, VGS=0VVGS=±20VID=7AVDS=32VVGS=4.5VVDS=15VID=1A

RG=3.3Ω,VGS=10VRD=15ΩVGS=0VVDS=25Vf=1.0MHzf=1.0MHz

Min.35---1---------------

Typ.-0.03---12---113.561152359501501002.6

Max.Units--22363-125±3018------1520--4

VV/℃mΩmΩVSuAuAuAnCnCnCnsnsnsnspFpFpFΩ

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Static Drain-Source On-Resistance

Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=70oC)

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage

2

Test Conditions

IS=1.7A, VGS=0VIS=7A, VGS=0VdI/dt=100A/µs

Min.---

Typ.-1812

Max.Units1.2--VnsnC

Reverse Recovery TimeReverse Recovery Charge

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AP4515GM

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-ResistanceGate Threshold VoltageForward Transconductance

o

Drain-Source Leakage Current (Tj=25C)oDrain-Source Leakage Current (Tj=70C)

Test Conditions

VGS=0V, ID=-250uA

2

Min.-35----1---------------

Typ.--0.03---8---102610630107001751306

Max.Units--4070-3--1-25±3016------1120--9

VV/℃mΩmΩVSuAuAuAnCnCnCnsnsnsnspFpFpFΩ

Breakdown Voltage Temperature CoefficientReference to 25℃,ID=-1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

VGS=-10V, ID=-5AVGS=-4.5V, ID=-3AVDS=VGS, ID=-250uAVDS=-10V, ID=-5AVDS=-30V, VGS=0VVDS=-24V, VGS=0VVGS=±12VID=-5AVDS=-25VVGS=-4.5VVDS=-15VID=-1A

RG=3.3Ω,VGS=-5VRD=15ΩVGS=0VVDS=-25Vf=1.0MHzf=1.0MHz

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2Reverse Recovery TimeReverse Recovery Charge

Test Conditions

IS=-1.7A, VGS=0VIS=-5A, VGS=0VdI/dt=-100A/µs

Min.---Typ.-1913

Max.Units-1.2--VnsnC

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.

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AP4515GM

N-Channel

6060TA=25oCID , Drain Current (A) 10V7.0VID , Drain Current (A)TA=150oC40 10V7.0V405.0V4.5V5.0V4.5V2020VG=3.0V00246800246VG=3.0V8VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

551.8ID=5ATA=25oC45ID=7AVG=10VNormalized RDS(ON)1.4RDS(ON) (mΩ)351.025-6.3-5150.6246810-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

1.67Normalized VGS(th) (V)1.2Tj=150oCIS(A)3.5Tj=25oC1.20.8000.20.40.60.810.4-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (oC)Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

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AP4515GM

N-Channel

f=1.0MHz121000010VGS , Gate to Source Voltage (V)ID=7AVDS=25V86C (pF)1000Ciss42Coss100004812162024Crss1591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1001Normalized Thermal Response (Rthja)Duty factor=0.50.210100usID (A)1ms10.10.10.05PDM0.020.0110ms100ms0.1tTDuty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 135℃/W0.01Single PulseTA=25oCSingle Pulse1sDC101000.010.110.0010.00010.0010.010.1110100VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40VDS=5VID , Drain Current (A)30VGTj=25oCTj=150oCQG4.5VQGSQGD2010Charge002468QVGS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

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AP4515GM

P-Channel

5050TA=25C40o -10V-7.0V40TA=150oC -10V-7.0V-ID , Drain Current (A)-ID , Drain Current (A)-5.0V30-4.5V30-5.0V-4.5V20201010VG=-3.0V002468VG=-3.0V002468-VDS , Drain-to-Source Voltage (V)-VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics

1101.7ID=-3A90TA=25oCNormalized RDS(ON)1.4ID=-5AVG=-10VRDS(ON) (mΩ)701.1500.8300.5246810-50050100150-VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (C)o Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

1.554Normalized -VGS(th) (V)1.21.1-IS(A)3Tj=150oC2Tj=25oC0.71000.20.40.60.810.3-50050100150-VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (C)oFig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

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AP4515GM

P-Channel

121000f=1.0MHz-VGS , Gate to Source Voltage (V)10ID=-5AVDS=-25VCiss864C (pF)Coss2Crss0051015201001591317212529QG , Total Gate Charge (nC)-VDS , Drain-to-Source Voltage (V)Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1001Normalized Thermal Response (Rthja)Duty factor=0.5100.2100us1ms-ID (A)10.10.10.0510ms100ms0.020.01PDM0.01Single PulsetTDuty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 135℃/W0.1TA=25oCSingle Pulse1sDC0.010.11101000.0010.00010.0010.010.1110100-VDS , Drain-to-Source Voltage (V)t , Pulse Width (s)Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40VDS=-5V-ID , Drain Current (A)30VGTj=25oCTj=150oCQG-4.5V20QGSQGD10Charge002468Q-VGS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

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