DRAM device

专利名称：DRAM device

发明人：Byung-Jun Park,Kyu-Hyun Lee申请号：US10207169申请日：20020730公开号：US06730975B2公开日：20040504

专利附图：

摘要：A DRAM device in which a portion of bit lines has enlarged width portions at aportion of a peripheral/core area to be connected with upper layered circuit wiringthrough metal contacts, includes spacers formed of a layer of material having an etchselectivity with respect to a bit line interlayer insulating layer deposited after said bit

lines are formed, and disposed on sides of an upper surface of each said enlarged widthportion to protect sides of said enlarged width portions; an interlayer insulating layerand at least a portion of an etch stop layer disposed between said bit lines andtransistors of a substrate; and metal contact pads formed along with bit line contactplugs to pass through said interlayer insulating layer and said etch stop layer.

申请人：SAMSUNG ELECTRONICS CO., LTD.

代理机构：Lee & Sterba, P.C.

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