Anti-fuse structure and method for manufacturing t

专利名称：Anti-fuse structure and method for

manufacturing the same

发明人：Hong He,Juntao Li,Junli Wang,Chih-Chao

Yang

申请号：US15251490申请日：20160830公开号：US09698098B1公开日：20170704

专利附图：

摘要：A method for manufacturing a semiconductor device includes forming a finextending between first and second pads on a substrate, removing a central portion of

the fin to create an opening between a first part of the fin extending from the first padand a second part of the fin extending from the second pad, growing first and secondepitaxial layers in the opening on a side of respective first and second parts of the fin,stopping the growth of the first and second epitaxial layers prior to merging, forming asilicide layer on the first and second pads, first and second parts of the fin and first andsecond epitaxial layers, wherein there is a gap between portions of the silicide layer onthe first and second epitaxial layers in the opening, and depositing a dielectric layer onthe silicide layer, filling in the gap.

申请人：International Business Machines Corporation

地址：Armonk NY US

国籍：US

代理机构：Ryan, Mason & Lewis, LLP

代理人：Vazken Alexanian

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