专利名称：WRITE VERIFY PROGRAMMING OF A
MEMORY DEVICE
发明人：Thomas Andre,Dimitri Houssameddine,Syed
M. Alam,Jon Slaughter,Chitra Subramanian
申请号：US14502367申请日：20140930
公开号：US20160093349A1公开日：20160331
专利附图：
摘要：A memory device is configured to identify a set of bit cells to be changed from afirst state to a second state. In some examples, the memory device may apply a first
voltage to the set of bit cells to change a least a first portion of the set of bit cells to thesecond state. In some cases, the memory device may also identify a second portion of thebit cells that remained in the first state following the application of the first voltage. Inthese cases, the memory device may apply a second voltage having a greater magnitude,duration, or both to the second portion of the set of bit cells in order to set the secondportion of bit cells to the second state.
申请人：Everspin Technologies, Inc.
地址：Chandler AZ US
国籍：US
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