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METHOD OF GROWING GRAPHENE NANOCRYSTALLINE LAYERS

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专利名称：METHOD OF GROWING GRAPHENE

NANOCRYSTALLINE LAYERS

发明人：Ulrich Wurstbauer,Jorge Manuel Garcia

Martinez,Aron Pinczuk

申请号：US13801438申请日：20130313

公开号：US20130337195A1公开日：20131219

专利附图：

摘要：Systems and methods for applying a graphene nanocrystalline layer on asubstrate in a vacuum chamber including positioning the substrate in the vacuum

chamber, evacuating the vacuum chamber to a pressure of less than 10torr, and applyingan electrical current to the glassy carbon filament to generate graphene carbon, in whichthe substrate is positioned in a location to receive at least a portion of the graphenecarbon upon the application of current.

申请人：The Trustees of Columbia University in the City of New York

地址：US

国籍：US

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