专利名称：Method and apparatus for fabricating self-aligned contacts in an integrated circuit
发明人：Theodore W. Houston申请号：US10417581申请日：20030417公开号：US06974968B2公开日：20051213
专利附图：
摘要：An integrated circuit includes a substrate with a gate section projectingupwardly between spaced source and drain regions. Side walls project upwardly beyondthe gate section on opposite sides thereof. A dielectric layer has an upper surface spaced
above the upper ends of the side walls. Contact openings are created through thedielectric layer, so as to expose surface portions on the source and drain regions.Conductive contacts are formed in the contact openings. The portions of the side wallswhich project above the gate section permit misalignment of the contact openings,without exposing any portion of the gate electrode during formation of either contactopening.
申请人：Theodore W. Houston
地址：Richardson TX US
国籍：US
代理人：Jacqueline J. Garner,W. James Brady, III,Frederick J. Telecky, Jr.
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