METHODS FOR FORMING THROUGH-WAFER INTERCONNECTS AN

专利名称：METHODS FOR FORMING THROUGH-WAFER INTERCONNECTS AND DEVICES ANDSYSTEMS HAVING AT LEAST ONE DAMSTRUCTURE

发明人：W. Mark Hiatt申请号：US11781746申请日：20070723

公开号：US20070262424A1公开日：20071115

专利附图：

摘要：A method for forming through-wafer interconnects (TWI) in a substrate. Blindholes are formed from a surface, sidewalls thereof passivated and coated with aconductive material. A vent hole is then formed from the opposite surface to intersectthe blind hole. The blind hole is solder filled, followed by back thinning of the vent holeportion of the wafer to a final substrate thickness to expose the solder and conductivematerial at both the active surface and the thinned back side. A metal layer having a glasstransition temperature greater than that of the solder may be plated to form a damstructure covering one or both ends of the TWI. Intermediate structures ofsemiconductor devices, semiconductor devices and systems are also disclosed.

申请人：W. Mark Hiatt

地址：Eagle ID US

国籍：US

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