INTEGRATED SENSOR AND CIRCUITRY AND PROCESS THEREF

专利名称：INTEGRATED SENSOR AND CIRCUITRY AND

PROCESS THEREFOR

发明人：Navid Yazdi申请号：US12033395申请日：20080219

公开号：US20080188059A1公开日：20080807

专利附图：

摘要：A micromachined sensor and a process for fabrication and vertical integration ofa sensor and circuitry at wafer-level. The process entails processing a first wafer toincompletely define a sensing structure in a first surface thereof, processing a second

wafer to define circuitry on a surface thereof, bonding the first and second waferstogether, and then etching the first wafer to complete the sensing structure, includingthe release of a member relative to the second wafer. The first wafer is preferably asilicon-on-insulator (SOI) wafer, and the sensing structure preferably includes a membercontaining conductive and insulator layers of the SOI wafer. Sets of capacitively coupledelements are preferably formed from a first of the conductive layers to define asymmetric capacitive full-bridge structure.

申请人：Navid Yazdi

地址：Ann Arbor MI US

国籍：US

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