专利名称:INTEGRATED SENSOR AND CIRCUITRY AND
PROCESS THEREFOR
发明人:Navid Yazdi申请号:US12033395申请日:20080219
公开号:US20080188059A1公开日:20080807
专利附图:
摘要:A micromachined sensor and a process for fabrication and vertical integration ofa sensor and circuitry at wafer-level. The process entails processing a first wafer toincompletely define a sensing structure in a first surface thereof, processing a second
wafer to define circuitry on a surface thereof, bonding the first and second waferstogether, and then etching the first wafer to complete the sensing structure, includingthe release of a member relative to the second wafer. The first wafer is preferably asilicon-on-insulator (SOI) wafer, and the sensing structure preferably includes a membercontaining conductive and insulator layers of the SOI wafer. Sets of capacitively coupledelements are preferably formed from a first of the conductive layers to define asymmetric capacitive full-bridge structure.
申请人:Navid Yazdi
地址:Ann Arbor MI US
国籍:US
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