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INTEGRATED SENSOR AND CIRCUITRY AND PROCESS THEREF

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专利内容由知识产权出版社提供

专利名称:INTEGRATED SENSOR AND CIRCUITRY AND

PROCESS THEREFOR

发明人:Navid Yazdi申请号:US12033395申请日:20080219

公开号:US20080188059A1公开日:20080807

专利附图:

摘要:A micromachined sensor and a process for fabrication and vertical integration ofa sensor and circuitry at wafer-level. The process entails processing a first wafer toincompletely define a sensing structure in a first surface thereof, processing a second

wafer to define circuitry on a surface thereof, bonding the first and second waferstogether, and then etching the first wafer to complete the sensing structure, includingthe release of a member relative to the second wafer. The first wafer is preferably asilicon-on-insulator (SOI) wafer, and the sensing structure preferably includes a membercontaining conductive and insulator layers of the SOI wafer. Sets of capacitively coupledelements are preferably formed from a first of the conductive layers to define asymmetric capacitive full-bridge structure.

申请人:Navid Yazdi

地址:Ann Arbor MI US

国籍:US

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