专利名称：Self-aligned spacer multiple patterning
methods
发明人：Bae, Young Cheol,Cardolaccia, Thomas,Liu, Yi申请号：EP10167364.8申请日：20100625公开号：EP2287667A1公开日：20110223
摘要：Self-aligned spacer multiple patterning method are provided. The methodsinvolve alkaline treatment of photoresist patterns and allow for the formation of highdensity resist patterns. The methods find particular applicability in semiconductor devicemanufacture.
申请人：Rohm and Haas Electronic Materials, LLC
地址：455 Forest Street Marlborough, Massachusetts 01752 US
国籍：US
代理机构：Buckley, Guy Julian
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