Freescale SemiconductorTechnical Data
Document Number: MRF6S24140H
Rev. 0, 3/2007
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for large-signal output applications at 2450 MHz. Deviceis suitable for use in industrial, medical and scientific applications.
•Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts
Power Gain — 13.2 dBDrain Efficiency — 45%
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CWOutput PowerFeatures
•Characterized with Series Equivalent Large-Signal Impedance Parameters•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation•Integrated ESD Protection•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S24140HR3MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N-CHANNELRF POWER MOSFETs
CASE 465B-03, STYLE 1NI-880MRF6S24140HR3CASE 465C-02, STYLE 1NI-880SMRF6S24140HSR3Table 1. Maximum Ratings
Rating
Drain-Source VoltageGate-Source VoltageStorage Temperature RangeCase Operating TemperatureOperating Junction Temperature
SymbolVDSSVGSTstgTCTJ
Value-0.5, +68-0.5, +12-65 to +150
150200
UnitVdcVdc°C°C°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to CaseCase Temperature 82°C, 140 W CWCase Temperature 75°C, 28 W CW
SymbolRθJC
Value (1,2)
0.290.33
Unit°C/W
1.MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.MRF6S24140HR3 MRF6S24140HSR3 1RF Device DataFreescale Semiconductor元器件交易网www.cecb2b.com
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)Machine Model (per EIA/JESD22-A115)Charge Device Model (per JESD22-C101)
Class2 (Minimum)A (Minimum)IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1300 mAdc)Drain-Source On-Voltage(VGS = 10 Vdc, ID = 3 Adc)Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
VGS(th)VGS(Q)VDS(on)
120.1
22.80.21
340.3
VdcVdcVdc
IDSSIDSSIGSS
———
———
101500
μAdcμAdcnAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%Probability on CCDF. Power GainDrain Efficiency
Intermodulation DistortionAdjacent Channel Power RatioInput Return Loss
1.Part internally matched both on input and output.
GpsηDIM3ACPRIRL
1323———
15.225-37-40-15
17—-35-38—
dB%dBcdBcdB
MRF6S24140HR3 MRF6S24140HSR3 2
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VBIASR1+C10+C9C8B1+C5C15C16C17C18VSUPPLYC7Z14C3Z8Z6Z5Z15Z7DUTZ9Z10Z11Z12C2Z13RFOUTPUTRFINPUTZ1C1Z2Z3Z4C4C6C12+C14+C13C11B2C19C20C21+C22Z1Z2Z3Z4Z5Z6, Z7Z80.678″ x 0.068″ Microstrip0.466″ x 0.068″ Microstrip0.785″ x 0.200″ Microstrip0.200″ x 0.530″ Microstrip0.025″ x 0.530″ Microstrip0.178″ x 0.050″ Microstrip0.097″ x 1.170″ MicrostripZ9Z10Z11Z12Z13
Z14, Z15PCB
0.193″ x 1.170″ Microstrip0.115″ x 0.550″ Microstrip0.250″ x 0.110″ Microstrip0.538″ x 0.068″ Microstrip0.957″ x 0.068″ Microstrip0.673″ x 0.095″ Microstrip
Arlon GX0300-55-22, 0.030″, εr = 2.55
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4, C5, C6C7, C11
C8, C12, C15, C19C9, C13C10, C14
C16, C17, C20, C21C18, C22R1
Description
47 Ω, 100 MHz Short Ferrite Beads, Surface Mount5.6 pF Chip Capacitors0.01 μF, 100 V Chip Capacitors2.2 μF, 50 V Chip Capacitors22 μF, 25 V Tantalum Capacitors47 μF, 16 V Tantalum Capacitors10 μF, 50 V Chip Capacitors220 μF, 50 V Electrolytic Capacitors240 Ω, 1/4 W Chip Resistor
Part Number2743019447
ATC600B5R6BT500XTC1825C103J1RACC1825C225J5RACT491D226M025ATT491D476K016ACGRM55DR61H106KA88BEMVY50VC221MJ10TPCRC1206240RFKTA
ManufacturerFair-RiteATCKemetKemetKemetKemetMurata
United Chemi-ConVishay
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
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C5R1++B1C17C10C9C8*C7*C15C16C3CUT OUT AREAC1C4C2MRF6S24140HRev. 1.0C19C20C13C12** Stacked
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
MRF6S24140HR3 MRF6S24140HSR3 4
RF Device Data
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++C14B2C11*C6C21C22++C18元器件交易网www.cecb2b.com
TYPICAL CHARACTERISTICS — 2450 MHz
16
IDQ = 1200 mAf = 2450 MHz15Gps, POWER GAIN (dB)14
Gps30 V3020
32 VηD111
10
28 V100
30 V0500
VDD = 28 V32 VηD, DRAIN EFFICIENCY (%)ηD, DRAIN EFFICIENCY (%)170
4050
1312
10
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiencyversus CW Output Power as a Function of VDD
14.514Gps, POWER GAIN (dB)13.51312.512
ηD11.5
1
10
Pout, OUTPUT POWER (WATTS) CW
100
VDD = 28 VIDQ = 1200 mAf = 2450 MHzGps6050403020100
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
15
Gps14Gps, POWER GAIN (dB)MTTF (HOURS)100
1000 mA13
1100 mA1300 mA1061400 mA1200 mA1071211101
10
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vf = 2450 MHz10510490
110
130
150
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the deviceis operated at VDD = 28 Vdc, Pout = 140 W CW, and ηD = 45%.MTTF calculator available at http:/www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calcu−lators by product.
Figure 5. Power Gain and Drain Efficiency versusCW Output Power as a Function of Total IDQ
Figure 6. MTTF versus Junction Temperature
MRF6S24140HR3 MRF6S24140HSR3
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f = 2450 MHz
Zsource
Zo = 10 ΩZload
f = 2450 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CWfMHz2450
Zsource
W4.55 + j4.9
ZloadW1.64 - j6.57
Zsource=Test circuit impedance as measured from
gate to ground.Zload
=Test circuit impedance as measured from drain to ground.
InputMatchingNetworkDeviceUnderTestOutputMatchingNetwork
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3 6
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PACKAGE DIMENSIONS
BG412XQbbbMTAMBM(FLANGE)3BKDTA2bbbMMBMNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M−1994.2.CONTROLLING DIMENSION: INCH.3.DIMENSION H IS MEASURED 0.030 (0.762) AWAYFROM PACKAGE BODY.4.RECOMMENDED BOLT CENTER DIMENSION OF1.16 (29.57) BASED ON M3 SCREW.DIMABCDEFGHKMNQRSaaabbbcccINCHESMINMAX1.3351.3450.5350.5450.1470.2000.4950.5050.0350.0450.0030.0061.100 BSC0.0570.0670.1750.2050.8720.8880.8710.889.118.1380.5150.5250.5150.5250.007 REF0.010 REF0.015 REFMILLIMETERSMINMAX33.9134.1613.613.83.735.0812.5712.830.891.140.080.1527.94 BSC1.451.704.445.2122.1522.5519.3022.603.003.5113.1013.3013.1013.300.178 REF0.254 REF0.381 REFMbbbcccHM(INSULATOR)RcccM(LID)M(INSULATOR)MTATAMBBMTATAMBSBNMMM(LID)aaaCMMFEA(FLANGE)TASEATINGPLANECASE 465B-03
ISSUE DNI-880
MRF6S24140HR3
STYLE 1:PIN 1.DRAIN 2.GATE 3.SOURCE
B1(FLANGE)BNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M−1994.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION H IS MEASURED 0.030 (0.762) AWAYFROM PACKAGE BODY.
INCHESMINMAX0.9050.9150.5350.5450.1470.2000.4950.5050.0350.0450.0030.0060.0570.0670.1700.2100.8720.8880.8710.8890.5150.5250.5150.5250.007 REF0.010 REF0.015 REFMILLIMETERSMINMAX22.9923.2413.6013.803.735.0812.5712.830.891.140.080.151.451.704.325.3322.1522.5519.3022.6013.1013.3013.1013.300.178 REF0.254 REF0.381 REFKDTA2bbbMMBMM(INSULATOR)RcccM(LID)M(INSULATOR)MbbbcccHMTATAMBBMTATAMBSBNMMM(LID)aaaMMDIMABCDEFHKMNRSaaabbbcccCFEA(FLANGE)STYLE 1:
PIN 1.DRAIN 2.GATE 3.SOURCE
TASEATINGPLANECASE 465C-02ISSUE DNI-880S
MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
DateMar. 2007
•Initial Release of Data Sheet
Description
MRF6S24140HR3 MRF6S24140HSR3 8
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RF Device DataDocument Number: MRF6S24140HFreescale SemiconductorRev. 0, 3/2007Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.
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