TSB772_07资料

TSB772

Low Vcesat PNP Transistor

TO-126

Pin Definition:

1. Emitter 2. Collector 3. Base

PRODUCT SUMMARY

BVCBO BVCEO IC

-50V -50V -3A

-0.5V @ IC / IB = -2A / -200mA

Features ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) ● Complementary part with TSD882

VCE(SAT)

Ordering Information

Part No.

Package

TO-126

Packing

1Kpcs / Bulk

Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

TSD772CK B0

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Collector Power Dissipation Operating Junction Temperature

Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2%

DC Pulse

o

Ta = 25C Tc = 25C

o

Symbol

VCBO VCEO VEBO IC PD TJ TSTG

Limit

-50 -50 -5 -3 -7 (note)

1 10 +150 - 55 to +150

Unit

V V V A W

oo

C C

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency

Conditions

IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -30V, IE = 0 VEB = 3V, IC = 0 IC / IB = -2A / -200mA IC / IB = -2A / -200mA VCE = -2V, IC = -1A VCE =-5V, IC=-100mA, f=100MHz

Symbol

BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE

fT Cob

Min

-50 -50 -5 -- -- -- -- 100 -- --

Typ

-- -- -- -- -- -0.3 -1 -- 80 55

Max

-- -- -- -1 -1 -0.5 -2 500 -- --

Unit

V V V uA uA V V MHz pF

Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/4 Version: A07

元器件交易网www.cecb2b.com

Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)

TSB772

Low Vcesat PNP Transistor

Figure 1. DC Current Gain

Figure 3. VBE(SAT) v.s. Ic

2/4 Figure 2. VCE(SAT) v.s. Ic

Figure 4. Power Derating Curve

Version: A07

元器件交易网www.cecb2b.com

TSB772

Low Vcesat PNP Transistor

TO-126 Mechanical Drawing

3/4

TO-126 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX

∝1 -- 3ºC -- 3ºC ∝2 -- 3ºC -- 3ºC ∝3 -- 3ºC -- 3ºC ∝4 -- 3ºC -- 3ºC A 0.150 0.153 3.81 3.91 B 0.275 0.279 6.99 7.09 C 0.531 0.610 13.50 15.50 D 0.285 0.303 7.52 7.72 E 0.034 0.041 0.95 1.05 F 0.028 0.031 0.71 0.81 G 0.048 0.052 1.22 1.32 H 0.170 0.1 4.34 4.80 I 0.095 0.105 2.41 2.66 J 0.045 0.055 1.14 1.39 K 0.045 0.055 1.14 1.39 L -- 0.021 -- 0.55 M

0.137 0.152 3.50 3.86

Version: A07

元器件交易网www.cecb2b.com

TSB772

Low Vcesat PNP Transistor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.

4/4 Version: A07