The 2SK1485, N-channel vertical type MOS FET is a switching devicewhich can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switchingcharacteristics, it is suitable for driving actuators such as motors, relays,and solenoids.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.11.6 ± 0.22.5 ± 0.14.0 ± 0.251.5 ± 0.10.8 MIN.10.42±0.0623FEATURES
•Directly driven by ICs having a 5 V power source.•Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)•Complementary to 2SJ199.
0.42 0.47±0.061.5±0.063.00.41+0.03–0.051.Source2.Drain3.GateMARK : NCABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)5
Drain Current (DC) (TC = 25°C)Drain Current (pulse)
Note1
Note2
VDSSVGSSID(DC)ID(pulse)PTTchTstg
100±20±1.0±2.02.0150−55 to +150
VVAAW°C°C
EQUIVALENT CIRCUIT
DrainTotal Power Dissipation (TA = 25°C) Channel TemperatureStorage Temperature
GateBodyDiodeGateProtectionDiodeSourceNotes1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mmRemark
The diode connected between the gate and source of the transistor serves as a protector against ESD. Whenthis device actually used, an additional protection circuit is externally required if a voltage exceeding the ratedvoltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.Document No.D15680EJ3V0DS00 (3rd edition)(Previous No. TC-2349)
Date PublishedJuly 2001 NS CP(K)Printed in Japan
The mark 5 shows major revised points.
©
1991, 2001
2SK1485ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain CurrentGate Leakage CurrentGate Cut-off VoltageForward Transfer AdmittanceDrain to Source On-state Resistance
SYMBOLIDSSIGSSVGS(off)| yfs|RDS(on)1RDS(on)2
Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTurn-on Delay TimeRise Time
Turn-off Delay TimeFall Time
CissCossCrsstd(on)trtd(off)tf
TEST CONDITIONSVDS = 100 V, VGS = 0 VVGS = ±20 V, VDS = 0 VVDS = 10 V, ID = 1 mAVDS = 10 V, ID = 0.5 AVGS = 4.0 V, ID = 0.5 AVGS = 10 V, ID = 0.5 AVDS = 10 VVGS = 0 Vf = 1 MHz
VDD = 25 V, ID = 0.5 AVGS = 10 VRG = 10 Ω
0.80.4
0.60.52308012141437065
1.20.8
1.2
MIN.
TYP.
MAX.10±102.0
UNIT
µAµAVSΩΩpFpFpFnsnsnsns
SWITCHING TIME
D.U.T.RLPG.RGVDDVGS VGSWave Form010%90%VGS90% ID IDWave Form90%VGS0ττ = 1 µ sDuty Cycle ≤ 1%ID010%10%td(on)tontrtd(off)tofftf2
Data Sheet D15680EJ3V0DS
2SK1485TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREAFORWARD BIAS SAFE OPERATING AREA4ID(pulse) PW = I1%100D(DC) 10 ms - A1mr so- ttc80n1e00Farrm sgu0.3nit60C anDirCearD0.1 - T40D - DVId0.03DSS20TA = 25°CSingle Pulse00.010204060801001201401601310301003001000TC - Case Temperature - °CVDS - Drain to Source Voltage - VTOTAL POWER DISSIPATION vs. DRAIN CURRENT VS. AMBIENT TEMPERATURE DRAIN TO SOURCE VOLTAGE2.4mounted on ceramic 600PulsedV board of 16 cm 2× 0.7 mm0.2.5 VW3 -2.0500 noAitmap1.6 - t400isnseirDr re1.2uC 300wniaPor la0.8D -200t oDI T- TP0.4100VGS = 2.0 V00306090120150180000.20.40.60.81.01.21.4TA - Ambient Temperature - °CVDS - Drain to Source Voltage - VFORWARD TRANSFER ADMITTANCE vs.TRANSFER CHARACTERISTICSDRAIN CURRENT38.0VDS = 10 VSVDS = 10 V Pulsed- 1ecn3.0f = 1MHZAat t-i tmndeA1.0r rrueC0.1fs nniaarT0.3rD d r- aDI0.01wro0.1F - | sfy |0.030.00101.02.03.00.0040.010.030.10.312VGS - Gate to Source Voltage - VID - Drain Current - AData Sheet D15680EJ3V0DS
3
2SK1485RDS(on) - Drain to Source On-state Resistance - Ω1.1ID = 0.5 APulsed0.9RDS(on) - Drain to Source On-state Resistance - ΩDRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGEDRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT0.9Pulsed0.7VGS = 4 V0.5VGS = 10 V0.70.50.30.100.3481216200.10.1VGS - Gate to Source Voltage - V0.31ID - Drain Current - A3600CAPACITANCE vs. DRAIN TO SOURCE VOLTAGESWITCHING CHARACTERISTICS800td(off)td(on),tr,td(off),tf - Switchig Time - nsCiss,Coss,Crss - Capacitance - pF300100503010530.2131030VGS = 0 Vf = 1 MHZCiss300100502010530.030.10.31td(on)trVDD = 25 VVGS = 10 VRG = 10 ΩtfCossCrss100200310VDS - Drain to Source Voltage - VID - Drain Current - ASOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.41.21.00.80.60.40.2000.20.40.60.81.01.21.4VSD - Source to Drain Voltage - VVGS = 0 VPulsed4
ISD - Source to Drain Current - AData Sheet D15680EJ3V0DS
2SK1485Data Sheet D15680EJ3V0DS
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2SK1485Data Sheet D15680EJ3V0DS
2SK1485Data Sheet D15680EJ3V0DS
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2SK1485•The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.•No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.•NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.•Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.•While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.•NEC semiconductor products are classified into the following three quality grades:\"Standard\developed based on a customer-designated \"quality assurance program\" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. \"Standard\":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipmentand industrial robots\"Special\":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)\"Specific\":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is \"Standard\" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)\"NEC\" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2)\"NEC semiconductor products\" means any semiconductor product developed or manufactured by or forNEC (as defined above).M8E 00. 4
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