Insulated gate field effect transistor and method

专利名称：Insulated gate field effect transistor and

method of manufacture thereof

发明人：Srinivasan, Senthil,Weybright, Mary,Gambino,

Jeffrey,Rupp, Thomas

申请号：EP99310309.2申请日：19991221公开号：EP1020922A2公开日：20000719

专利附图：

摘要：A method for forming a field effect transistor includes providing a

semiconductor substrate having: a gate insulation layer; and, a gate metalization layer

disposed on the gate insulation layer, such gate metalization comprising an oxidizablematerial. A mask is provided over the gate metalization layer, such mask having anaperture therein and masking a region of the gate metalization layer. The mask issubjected to a plasma etch to selectively remove portions of the gate metalization layerexposed by the aperture while leaving unetched the masked region of the gate

metalization layer to form a gate for the transistor. An oxidation resistant layer is formedan over the formed gate. The semiconductor substrate is heated with the oxidationresistant layer. Using the gate as a mask, source and drain regions for the transistor areformed. The heating comprises heating to a temperature in the order of 1050°C toanneal the substrate. A field effect transistor includes a silicon substrate; a gate silicondioxide layer disposed on the substrate; a gate disposed on the gate insulation layer,such gate having an oxidizable material; and an oxidation resistant layer disposed onsidewalls of the oxidizable material of the gate. The oxidizable material comprises anelectrically conductive material.

申请人：Infineon Technologies North America Corp.,International Business MachinesCorporation

地址：1730 North First Street San Jose, CA 35112 US,New Orchard Road Armonk, NY10504 US

国籍：US,US

代理机构：Vigars, Christopher Ian

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