THREE DIMENSIONAL NAND STRING MEMORY DEVICES AND M

专利名称：THREE DIMENSIONAL NAND STRING

MEMORY DEVICES AND METHODS OFFABRICATION THEREOF

发明人：Yao-Sheng Lee,Jayavel

Pachamuthu,Raghuveer S. Makala,GeorgeMatamis,Johann Alsmeier,Henry Chien

申请号：US14456496申请日：20140811

公开号：US20160043093A1公开日：20160211

专利附图：

摘要：A method of making a monolithic three dimensional NAND string includesforming a stack of alternating first and second material layers over a substrate, etchingthe stack to form a front side opening, partially removing the second material layersthrough the front side opening to form front side recesses, forming a first blockingdielectric in the front side recesses, forming charge storage regions over the firstblocking dielectric in the front side recesses, forming a tunnel dielectric layer and asemiconductor channel over the charge storage regions in the front side opening, etchingthe stack to form a back side opening, removing the second material layers through theback side opening to form back side recesses using the first blocking dielectric as an etchstop, forming a second blocking dielectric in the back side recesses, and forming controlgates over the second blocking dielectric in the back side recesses.

申请人：SanDisk Technologies Inc.

地址：Plano TX US

国籍：US

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