2SD780A PDF规格书

+0.12.9-0.1+0.10.4-0.1Unit:mm

■ Features0.43 ● High DC current gain ● Complimentary to 2SB736A+0.12.4-0.1+0.11.3-0.11+0.10.95-0.1+0.11.9-0.120.55+0.050.1-0.01+0.10.97-0.11.Base2.Emitter

+0.10.38-0.10-0.13.collector

■ Absolute Maximum Ratings Ta = 25℃Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature RangeSymbolVCBOVCEOVEBOICPCTJTstgRating80805300200150 -55 to 150mAmW℃VUnit■ Electrical Characteristics Ta = 25℃Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage (Note.1) Base - emitter saturation voltage (Note.1) Base - emitter voltage (Note.1) DC current gain (Note.1) Collector output capacitance Transition frequencySymbolVCBOVCEOVEBOICBOIEBOTest Conditions Ic= 100 μA， IE= 0 Ic= 1 mA， IB= 0 IE= 100μA， IC= 0 VCB= 70 V , IE= 0 VEB= 5V , IC=00.15600110307140pFMHz5200Min808050.10.10.61.2700400 uAVmVVTypMaxUnitVCE(sat) IC=300 mA, IB=30mAVBE(sat) IC=300 mA, IB=30mAVBEhFE(1)hFE(2)CobfT VCE= 6V, IC=10mA VCE= 1V, IC= 50mA VCE= 2V, IC= 300mA VCB= 6V, IE=0,f=1MHz VCE= 6V, IE= -10mANote.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.■ Classification of hfe(1)TypeRangeMarking2SD780A-D51110-180D512SD780A-D52135-220D522SD780A-D53170-270D532SD780A-D200-320D2SD780A-D55250-400D552SD780ANPN Transistors■ Typical Characterisitics2SD780ANPN Transistors■ Typical Characterisitics