专利名称：METHOD FOR MANUFACTURING SILICON-CONTAINING FILM
发明人：Atsushi Tomyo,Yoshiyuki Nasuno申请号：US14234465申请日：20120531
公开号：US201401415A1公开日：20140605
专利附图：
摘要：A method for manufacturing a silicon-containing film includes the steps ofloading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning,reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is
supplied into a chamber in such a way that a partial pressure of CFgas in the chamber isA×(2.0×10) Pa or less at the end of the step of exhausting gas.
申请人：Atsushi Tomyo,Yoshiyuki Nasuno
地址：Osaka-shi JP,Osaka-shi JP
国籍：JP,JP
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