SI2302CD

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)20

RDS(on) (Ω)0.057 at VGS = 4.5 V 0.075 at VGS = 2.5 V

ID (A)2.92.6

Qg (Typ.)3.5

FEATURES

•Halogen-free Option Available •TrenchFET® Power MOSFET

APPLICATIONS

•Load Switching for Portable Devices •DC/DC Converter

TO-236(SOT-23)RoHSCOMPLIANTG13DS2Top ViewSi2302CDS (N2)** Marking CodeOrdering Information: Si2302CDS-T1-E3 (Lead (Pb)-free) Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)aPulsed Drain Currentb

Continuous Source Current (Diode Conduction)aPower Dissipationa

Operating Junction and Storage Temperature Range

TA = 25 °CTA = 70 °CTA = 25 °CTA = 70 °C

Symbol VDSVGSIDIDMISPDTJ, Tstg

0.720.860.55

- 55 to 1502.92.3

10

0.60.710.46

W°C

5 s

20± 8

2.62.1

A

Steady State

Unit V

THERMAL RESISTANCE RATINGS

Maximum Junction-to-AmbientaMaximum Junction-to-Foot

Notes:

a. Surface Mounted on 1\" x 1\" FR4 board.

b. Pulse width limited by maximum junction temperature.

t ≤ 5 sSteady StateSteady State

RthJARthJF

12014062

14517578

°C/W

Parameter Symbol TypicalMaximumUnit Document Number: 685S-81007-Rev. A, 05-May-08www.vishay.com

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Si2302CDS

Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions Min.Typ.Static

Drain-Source Breakdown VoltageGate-Threshold VoltageGate-Body Leakage

Zero Gate Voltage Drain CurrentOn-State Drain CurrentaDrain-Source On-ResistanceForward TransconductanceaDiode Forward VoltageDynamicb

Total Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceSwitching

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Source-Drain Reverse Recovery TimeBody Diode Reverse Recovery Charge

td(on) trtd(off) tftrrQrr

IF = 3.6 A, dI/dt = 100 A/µsVDD = 10 V, RL = 2.78 Ω

ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω

873078.52.0

1515151.0

nCns

Qg Qgs Qgd Rg

f = 1.0 MHz

2.0

VDS = 10 V, VGS = 4.5 V, ID = 3.6 A

3.50.60.4.0

8.0

Ω

5.5

nC

a

Max.Unit

VDS VGS(th) IGSSIDSSID(on) RDS(on) gfs VSD

VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C

VDS ≥ 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5 V, ID = 3.6 A IS = 0.95 A, VGS = 0 V

200.40

0.85175

6

0.0450.056130.7

1.20.0570.075

V

± 100nA

µAAΩSV

Notes:

a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.TYPICAL CHARACTERISTICS 25°C, unless otherwise noted10VGS=5thru2V8ID- DrainCurrent(A)VGS=1.5VID- DrainCurrent(A)810TC=25 °C2TC=125 °CTC=-55 °C2VGS=1V00.00.51.01.52.000.00.40.81.21.62.0VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V)Output Characteristicswww.vishay.com2

Transfer CharacteristicsDocument Number: 685S-81007-Rev. A, 05-May-08

Si2302CDSVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted2.00.070RDS(on)- On-Resistance(Ω)1.6ID- DrainCurrent(A)0.060VGS=2.5V1.20.050VGS=4.5V0.8TC=25 °C0.4TC=125 °C0.00.0TC=-55 °C0.30.60.91.21.50.0400.0300246810VGS-Gate-to-SourceVoltage(V)ID-DrainCurrent(A)Transfer Characteristics

400Ciss320C - Capacitance(pF)5On-Resistance vs. Drain Current

ID=3.6AVGS- Gate-to-SourceVoltage(V)4VDS=10VVDS=15V2403VDS=5V2160Coss80Crss0051015201001234VDS-Drain-to-SourceVoltage(V)Qg-TotalGateCharge(nC)Capacitance

1.6VGS=2.5V,ID=3.1A1.4RDS(on)- On-ResistanceIS- SourceCurrent(A)10100Gate Charge

TJ=150 °C1(Normalized)1.2VGS=4.5V,ID=3.6A1.00.1TJ=25 °C0.80.01TJ=- 55 °C0.6- 50- 2502550751001251500.0010.00.20.40.60.81.01.2TJ-JunctionTemperature(°C)VSD-Source-to-DrainVoltage(V)On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Document Number: 685S-81007-Rev. A, 05-May-08www.vishay.com

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Si2302CDSVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted0.120.2RDS(on)- On-Resistance(Ω)0.10VGS(th)Variance(V)0.10.00.08TJ=125 °C- 0.1ID=1mA- 0.20.06TJ=25 °C0.04012345VGS-Gate-to-SourceVoltage(V)- 0.3- 50- 2502550ID=250 µA75100125150TJ-Temperature(°C)On-Resistance vs. Gate-to-Source Voltage1010LimitedbyRDS(on)*Threshold Voltage100µs8ID-DrainCurrent(A)11msPower(W)610ms4100ms0.1TA=25 °CSinglePulse1s10s100 s,DCBVDSSLimited2TA=25 °C00.010.010.10.11Time(s)101001000Single Pulse Power1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance100110VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedSafe Operating Area, Junction-to-Ambient0.20.10.10.050.02PDMt1t21.DutyCycle,D=t1t2Notes:2.PerUnitBase=RthJA=70 °C/WSinglePulse0.0110-410-310-210-11SquareWavePulseDuration(s)103.TJM-TA=PDMZthJA(t)4.SurfaceMounted1001000Normalized Thermal Transient Impedance, Junction-to-AmbientVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?685.

www.vishay.com4Document Number: 685S-81007-Rev. A, 05-May-08

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Document Number: 91000Revision: 18-Jul-08

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