专利名称：Semiconductor Component Arrangement
Comprising a Trench Transistor
发明人：Markus Zundel,Franz Hirler,Norbert
Krischke
申请号：US12987852申请日：20110110
公开号：US20110163366A1公开日：20110707
专利附图：
摘要：Disclosed is a semiconductor component arrangement and a method forproducing a semiconductor component arrangement. The method comprises producing a
trench transistor structure with at least one trench disposed in the semiconductor bodyand with at least an gate electrode disposed in the at least one trench. An electrodestructure is disposed in at least one further trench and comprises at least one electrode.The at least one trench of the transistor structure and the at least one further trench areproduced by common process steps. Furthermore, the at least one electrode of theelectrode structure and the gate electrode are produced by common process steps.
申请人：Markus Zundel,Franz Hirler,Norbert Krischke
地址：Egmating DE,Isen DE,Munich DE
国籍：DE,DE,DE
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