CMOS level shifter

申请(专利)号： US19770844762

专利号： US4150308A 主分类号： H03K17/60

申请权利人： MOTOROLA, INC. 公开国代码： US 优先权国家： US

摘 要：

A level shifter using complementary metal oxide semiconductor (CMOS) transistors is provided. A first transistor couples a first voltage to a node of the level shifter circuit, and the first transistor is controlled by an input signal. A P-channel and an N-channel MOS device are connected in series between the first voltage and a second voltage. The gate electrodes of the P-channel and N-channel MOS devices are connected to the node. An output for the level shifter circuit is taken from a junction formed by the P-channel and N-channel MOS devices. A

resistance is coupled between the gate electrodes of the P-channel and the N-channel MOS devices and the second voltage. 主权项：

申请日： 1977-10-25 公开公告日： 1979-04-17

分类号： H03K17/60;

H03K17/04; H03K3/286; H03K3/353 发明设计人： RICHARD H.

ADLHOCH 申请国代码： US

优先权： 19771025 US

84476277

摘 要 附 图：

权 利 要 求 说 明 书

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说 明 书

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