IRLML6302资料

PD- 93755

IRLML6402

HEXFET® Power MOSFET

Ultra Low On-ResistancelP-Channel MOSFETl SOT-23 FootprintlLow Profile (<1.1mm)

lAvailable in Tape and ReellFast Switching

l

DVDSS = -20VGSRDS(on) = 0.065ΩDescription

These P-Channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET®power MOSFETs are well known for, provides the designer withan extremely efficient and reliable device for use in battery andload management.

A thermally enhanced large pad leadframe has been incorporatedinto the standard SOT-23 package to produce a HEXFET PowerMOSFET with the industry's smallest footprint. This package,dubbed the Micro3™, is ideal for applications where printedcircuit board space is at a premium. The low profile (<1.1mm)of the Micro3 allows it to fit easily into extremely thin applicationenvironments such as portable electronics and PCMCIA cards.The thermal resistance and power dissipation are the bestavailable.

Micro3™

Absolute Maximum Ratings

Parameter

VDS

ID @ TA = 25°CID @ TA= 70°CIDM

PD @TA = 25°CPD @TA = 70°CEASVGS

TJ, TSTG

Drain- Source Voltage

Continuous Drain Current, VGS @ -4.5VContinuous Drain Current, VGS @ -4.5VPulsed Drain Current 󰂁Power DissipationPower DissipationLinear Derating Factor

Single Pulse Avalanche Energy󰂄Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-20-3.7-2.2-221.30.80.0111± 12-55 to + 150

Units

VA

WW/°CmJV°C

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient󰂃

Typ.

75

Max.

100

Units

°C/W

www.irf.com1

8/13/99

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402

元器件交易网www.cecb2b.com

IRLML6402