Optical intensity modulator

专利名称：Optical intensity modulator发明人：Sugawara, Mitsuru申请号：EP89311713.5申请日：19891113公开号：EP0369706A3公开日：19910502

专利附图：

摘要：An optical intensity modulator includes a compound semiconductor substrate(11) of a first conduction type having first and second surfaces, and a compound

semiconductor active layer (12) of the first conduction type formed on the first surface ofthe compound semiconductor substrate. An incident laser beam (L) to be intensity-

modulated is applied to the compound semiconductor active layer. The modulatorfurther includes a compound semiconductor layer (13) of the first conduction typeformed on the compound semiconductor active layer, an opposite conduction typecompound semiconductor layer (14) of a second conduction type opposite to the firstconduction type, a first electrode (15) formed on the opposite conduction typecompound semiconductor layer, and a second electrode (16) formed on the secondsurface of the compound semiconductor substrate.

申请人：FUJITSU LIMITED

地址：1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP

国籍：JP

代理机构：Fane, Christopher Robin King

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