N-Channel Enhancement Mode MOSFET
SPN9926A
DESCRIPTION APPLICATIONS
z Power Management in Note book The SPN9926A is the Dual N-Channel logic
enhancement mode power field effect transistors are z Portable Equipment produced using high cell density , DMOS trench z Battery Powered System
z DC/DC Converter technology.
z Load Switch
This high density process is especially tailored to
z DSC
minimize on-state resistance. z LCD Display inverter These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES PIN CONFIGURATION(SOP – 8P)
20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V
20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability SOP – 8P package design
PART MARKING
2007/ 06 / 20 Ver.1
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N-Channel Enhancement Mode MOSFET
SPN9926A
PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 Drain 2 5 D2 Drain 2 6 D2 Drain 1 7 D1 Drain 1 8 D1 ORDERING INFORMATION Part Number Package Part Marking SPN9926AS8RG SOP- 8P SPN9926AS8TG SOP- 8P ※ SPN9926AS8RG : 13” Tape Reel ; Pb – Free ※ SPN9926AS8TG : Tube ; Pb – Free SPN9926A SPN9926A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2007/ 06 / 20 Ver.1
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VDSS 20 VGSS ±12 TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA V V A 5.0 3.4 30 A 1.6 A 2.8 1.8 -55/150 -55/150 105 W ℃ ℃ ℃/W TA=25℃ TA=70℃ 元器件交易网www.cecb2b.com
N-Channel Enhancement Mode MOSFET
Parameter SymbolConditions Min. Typ Max.UnitSPN9926A
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSSVGS=0V,ID250uA 20 V VGS(th)VDS=VGS,ID250uA 0.6 IGSS VDS=0V,VGS±12V ±100 nAVDS=20V,VGS0V 1 IDSS VDS=20V,VGS=0V uA 5 TJ=55℃ =5V,VGS=4.5V ID(on) VDS≦6 A ==VGS=4.5V,ID6.0A 0.024 0.030=RDS(on)Ω VGS=2.5V,ID5.0A 0.032 0.042gfs VDS=5V,ID-3.6A 10 S =VSD IS=1.7A,VGS0V 0.8 1.2 V ===Qg 2 VDS=10V, VGS=4.5V, nCQgs 2.5 ID=6.0A Qgd 2.1 Ciss VDS=8V,VGS=0V Coss f=1MHz Crss 575 pF 84 22 td(on) 10 14 VDD=10V,RL=6Ω 16 20 tr ns ID≡1.0A,VGEN=4.5V td(off) 35 40 RG=6Ω tf 3 10 2007/ 06 / 20 Ver.1
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N-Channel Enhancement Mode MOSFET
SPN9926A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
N-Channel Enhancement Mode MOSFET
SPN9926A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
N-Channel Enhancement Mode MOSFET
SPN9926A
TYPICAL CHARACTERISTICS
2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
N-Channel Enhancement Mode MOSFET
SPN9926A
SOP- 8 PACKAGE OUTLINE 2007/ 06 / 20 Ver.1
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元器件交易网www.cecb2b.com
N-Channel Enhancement Mode MOSFET
SPN9926A
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2007/ 06 / 20 Ver.1
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