专利名称：Epitaxial deposition of thin films
发明人：Epler, John E.,Chung, Harlan F.,Paoli, Thomas
L.
申请号：EP89303249.0申请日：19890403公开号：EP0336672A2公开日：19891011
摘要：Changes in the geometrical and stoichiometric properties of deposited films arebrought about by employing a radiation beam directed to a spot which is scanned acrossthe growth surface in a chemical vapor deposition reactor system, e.g., MOCVD system.Gaussian profile spot intensity variations at selected regions at the growth surface willselectively enhance the deposition growth rate and/or stoichiometric content of thedeposited film. Selective monotonic increasing and decreasing changes in film thicknessand stoichiometric content can be accomplished while the spot is scanned across thegrowth surface. Such changes or variations in film thickness and stoichiometric contentare useful in fabricating semiconductor devices having regions of different bandgap andrefractive index properties in one or more semiconductor layers of such devices. Theseproperty variations may be utilized to produce buried index waveguiding features in suchdevices and produce multiple emitters each having a different wavelength emissionuseful in printer and optical communication applications.
申请人：XEROX CORPORATION
地址：Xerox Square - 020 Rochester New York 14644 US
国籍：US
代理机构：Weatherald, Keith Baynes
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