BCR16PM-14LG
Triac
Medium Power Use
REJ03G1675-0100
Rev.1.00 Jun 04, 2008
Features
• • • •
IT (RMS) : 16 A VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000V
• The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type
• UL Recognized : Yellow Card No. E223904 File No.E80271
Outline
RENESAS Package code: PRSS0003AA-A(Package name: TO-220F ) 2311231. T1 Terminal2. T2 Terminal3. Gate Terminal Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices. Maximum Ratings Voltage class Parameter Symbol Unit Condition 14 Repetitive peak off-state voltage Note1 800 V Tj = 125°C VDRM 700 V Tj = 150°C Note1Non-repetitive peak off-state voltage VDSM 840 V Notes: 1. Gate open. REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 1 of 7
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BCR16PM-14LG
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 16 A Commercial frequency, sine full wave
360°conduction, Tc = 87°C
Surge on-state current ITSM 160 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
222It for fusion It 106.5 As Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction Temperature Tj –40 to +150 °C Storage temperature Tstg –40 to +150 °C Mass — 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 5.0 mA Tj = 150°C, VDRM applied On-state voltage Gate trigger voltageNote2
Ι
ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ
VTM — — 1.5 V Tc = 25°C, ITM = 25 A,
instantaneous measurement
VFGTΙ — — 1.5 V Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω VRGTΙ — — 1.5 V VRGTΙΙΙ — — 1.5 V IFGTΙ — — 30 mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω IRGTΙ — — 30 mA IRGTΙΙΙ — — 30 mA VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM Rth (j-c) — — 3.5 °C/W Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C
Gate trigger curentNote2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –8.0 A/ms 3. Peak off-state voltage VD = 400 V Supply VoltageTime(di/dt)cTimeMain CurrentMain Voltage(dv/dt)cTimeVD REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 2 of 7
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BCR16PM-14LG
Performance Curves
Maximum On-State Characteristics103200Rated Surge On-State CurrentSurge On-State Current (A)4.01801601401201008060402001002345710123457102On-State Current (A)102Tj = 150°C101Tj = 25°C1000.51.01.52.02.53.03.5On-State Voltage (V)Conduction Time (Cycles at 60Hz)Gate Trigger Current vs.Junction Temperature10373210273232VGM = 10VGate Trigger Current (Tj = t°C)× 100 (%)Gate Trigger Current (Tj = 25°C)Gate Characteristics (I, II and III)PG(AV) = 0.5WTypical ExampleGate Voltage (V)101753VGT = 1.5V21007532PGM = 5WIGM = 2AIRGT IIIIFGT I, IRGT I10–17IFGT I, IRGT I, IRGT IIIVGD = 0.1V5101235710223571032357104101–60–40–20020406080100120140160Gate Current (mA)Junction Temperature (°C)Gate Trigger Voltage (Tj = t°C)× 100 (%)Gate Trigger Voltage (Tj = 25°C)Gate Trigger Voltage vs.Junction Temperature103732102732Maximum Transient Thermal ImpedanceCharacteristics (Junction to case)Transient Thermal Impedance (°C/W)1024.03.53.02.52.01.51.00.50.010–1100101102103104Typical Example101–60–40–20020406080100120140160Junction Temperature (°C)Conduction Time (Cycles at 60Hz) REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 3 of 7
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BCR16PM-14LG
Maximum Transient Thermal ImpedanceCharacteristics (Junction to ambient)Maximum On-State Power Dissipation40Transient Thermal Impedance (°C/W)103On-State Power Dissipation (W)75327532No Fins3530252015105002468101214161820102360° ConductionResistive,inductive loads1017532100753210–11012357102235710323571042357105Conduction Time (Cycles at 60Hz)Allowable Case Temperature vs.RMS On-State Current160160RMS On-State Current (A)Allowable Ambient Temperature vs.RMS On-State CurrentAll fins are black paintedaluminum and greasedAmbient Temperature (°C)140Case Temperature (°C)Curves apply regardlessof conduction angle140120100801201008060402000360° ConductionResistive,inductive loads2468101214161820120 120 t2.3100 100 t2.360 60 t2.360Curves applyregardless of40conduction angleResistive,20inductive loadsNatural convection002468101214161820RMS On-State Current (A)RMS On-State Current (A)Repetitive Peak Off-State Current (Tj = t°C)× 100 (%)Repetitive Peak Off-State Current (Tj = 25°C)Allowable Ambient Temperature vs.RMS On-State Current160Repetitive Peak Off-State Current vs.Junction Temperature53Typical Example2105753210475321037532102–60–40–20020406080100120140160Ambient Temperature (°C)14012010080Natural convectionNo FinsCurves apply regardlessof conduction angleResistive, inductive loads604020000.51.01.52.02.53.03..0RMS On-State Current (A)Junction Temperature (°C)
REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 4 of 7
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BCR16PM-14LG
Holding Current vs.Junction TemperatureHolding Current (Tj = t°C)× 100 (%)Holding Current (Tj = 25°C)103732102732101–60–40–20020406080100120140160Latching Current vs.Junction Temperature103753210275321017532100–40Typical ExampleLatching Current (mA)DistributionT2+, G–Typical ExampleT2+, G+Typical ExampleT2–, G–04080120160Junction Temperature (°C)Junction Temperature (°C)Breakover Voltage (dv/dt = xV/µs)× 100 (%)Breakover Voltage (dv/dt = 1V/µs)Breakover Voltage vs.Junction TemperatureBreakover Voltage (Tj = t°C)× 100 (%)Breakover Voltage (Tj = 25°C)160140120Breakover Voltage vs.Rate of Rise of Off-State Voltage (Tj=125°C)160140120100806040200101Typical ExampleTypical ExampleTj = 125°C1008060III Quadrant40200–60–40–20020406080100120140160I Quadrant102103104Junction Temperature (°C)Rate of Rise of Off-State Voltage (V/µs)Breakover Voltage (dv/dt = xV/µs)× 100 (%)Breakover Voltage (dv/dt = 1V/µs)Breakover Voltage vs.Rate of Rise of Off-State Voltage (Tj=150°C)160140120100806040200101Commutation Characteristics (Tj=125°C)Critical Rate of Rise of Off-StateCommutating Voltage (V/µs)1027532TimeMain VoltageTypical Example(dv/dt)cVDTj = 125°CMain Current(di/dt)cIT = 4AITτ = 500µsτTimeTypical ExampleTj = 150°CVD = 200Vf = 3HzIII Quadrant1017Minimum5CharacteristicsValueI Quadrant102103104321007I QuadrantIII Quadrant357101235710223Rate of Rise of Off-State Voltage (V/µs)Rate of Decay of On-StateCommutating Current (A/ms) REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 5 of 7
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BCR16PM-14LG
Gate Trigger Current vs.Gate Current Pulse WidthCommutation Characteristics (Tj=150°C)Critical Rate of Rise of Off-StateCommutating Voltage (V/µs)1027Typical ExampleMain Voltage(dv/dt)c5Tj = 150°CMain CurrentIT = 4AIT3τ = 500µsτ2VD = 200Vf = 3Hz1017I Quadrant5321007Gate Trigger Current (tw)× 100 (%)Gate Trigger Current (DC)TimeVD(di/dt)cTime103732102732101010Typical ExampleIFGT IIRGT IIRGT IIIIII QuadrantMinimumCharacteristicsValue3571012357102232345710123457102Rate of Decay of On-StateCommutating Current (A/ms)Gate Trigger Characteristics Test Circuits6Ω6ΩGate Current Pulse Width (µs)Recommended Circuit Values Around The TriacLoadC16VVA330Ω6VVA330ΩR1C0R0Test Procedure I6ΩTest Procedure IIC1 = 0.1 to 0.47µFC0 = 0.1µFR0 = 100ΩR1 = 47 to 100Ω6VVA330ΩTest Procedure III
REJ03G1675-0100 Rev.1.00 Jun 04, 2008
Page 6 of 7
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BCR16PM-14LG
Package Dimensions
Package NameTO-220FJEITA Package CodeSC-67RENESAS CodePRSS0003AA-APrevious CodeMASS[Typ.]2.0gUnit: mm10.5Max5.22.85.01.217φ3.2 ± 0.213.5Min3.61.3Max0.82.2.8.50.52..5
Order Code
Lead form Straight type Lead form
Standard packing Vinyl sack
Plastic Magazine (Tube)
Quantity
10050
Standard order code
Type name
Type name – Lead forming code
Standard order code example BCR16PM-14LG BCR16PM-14LG-A8
Note : Please confirm the specification about the shipping in detail.
REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Page 7 of 7
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanNotes:1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.3. 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